CSD18541F5 Allicdata Electronics
Allicdata Part #:

296-44374-2-ND

Manufacturer Part#:

CSD18541F5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 60V 2.2A PICOSTAR
More Detail: N-Channel 60V 2.2A (Ta) 500mW (Ta) Surface Mount 3...
DataSheet: CSD18541F5 datasheetCSD18541F5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: 3-PICOSTAR
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 777pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: FemtoFET™
Rds On (Max) @ Id, Vgs: 65 mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD18541F5 is part of the Texas Instruments CSD18541F Series of Power MOSFETs. It is a 100V single N-channel depletion-mode. This device is designed for use in high side switch applications and can be used for a range of power sources, including DC and AC circuits. It is a highly efficient solution for a variety of power management needs.

The CSD18541F5 is designed to offer the highest possible performance and reliability, with a wide supply voltage range and high breakdown voltage. It is equipped with an internal charge pump to enhance the turn-off speed of the output performance, helping to reduce power consumption. This device is capable of operating in temperatures as low as -40C, making it an excellent solution for heavy-duty conditions.

The working principle behind the CSD18541F5 is relatively straightforward. When the gate voltage is applied, a negative current flows from the drain to the source. This generates a depletion field which opens up a channel for electrons to flow. As the negative current increases, the depletion field grows and so does the conduction area within the MOSFET. This results in the gate becoming fully opened and the device conducting, resulting in a good control over the power transfer in the circuit.

The CSD18541F5 offers a wide range of applications in high side switching, enabling it to be used in a variety of DC and AC circuits, such as portable or stationary industrial equipment and automation. Its high breakdown voltage and high current rating make it highly suitable for a variety of operating conditions, such as under high temperature or heavy load. Its 100V rating also makes it suitable for powering devices in power control and start-up applications.

The CSD18541F5 is a high performance, reliable device that is specifically designed for use in high side application. Its wide supply voltage range and high breakdown voltage make it ideal for a wide range of power management tasks. Its internal charge pump ensures that the output performance is fast and efficient, helping to reduce power consumption, while its temperature range makes it suitable for heavy-duty operation.

The specific data is subject to PDF, and the above content is for reference

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