| Allicdata Part #: | 296-42632-2-ND |
| Manufacturer Part#: |
CSD19537Q3T |
| Price: | $ 0.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 100V 50A 8VSON |
| More Detail: | N-Channel 100V 50A (Ta) 2.8W (Ta), 83W (Tc) Surfac... |
| DataSheet: | CSD19537Q3T Datasheet/PDF |
| Quantity: | 1000 |
| 250 +: | $ 0.60750 |
| 500 +: | $ 0.53686 |
| 750 +: | $ 0.46904 |
| 1250 +: | $ 0.42383 |
| Vgs(th) (Max) @ Id: | 3.6V @ 250µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-VSON (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The CSD19537Q3T is a single MOSFET, a type of transistor integrated circuit, which typically includes a source, a gate, and a drain. MOSFETs operate on the principle that the channel resistance is changed when a suitable voltage is applied to the gate. They are commonly used for power management, as well as digital logic applications.
In terms of application fields for the CSD19537Q3T, the circuit is generally used for power supply voltage monitoring and power management applications. Most commonly, the device is employed in power supply voltage regulation, such as DC-DC converters and switched-mode power supplies. It can also be used as an on/off switch in low-voltage circuits. In addition, the device is employed in many digital logic applications, such as flip-flops, as well as as circuits like ring counters and shift registers.
The working principle of the device is relatively simple. Its main function is to act as a switch, turning the circuit on or off in response to a suitable voltage applied to the gate. The device is fabricated on a silicon substrate and can be manufactured using either a n-channel or a p-channel MOSFET structure. The device has three primary terminals, gate, source and drain, with the sources being connected to a ground reference. Applying a positive voltage to the gate with respect to the source opens the gate, allowing current to flow from the source to the drain. Conversely, applying a negative voltage to the gate with respect to the source closes the gate, preventing current from flowing. The on-resistance of the device is determined by the gate voltage, with a higher voltage resulting in a lower on-resistance.
The CSD19537Q3T also has one of the most robust avalanche characteristics of any single MOSFET, making it an excellent choice for use in high-voltage power management applications. This allows the device to withstand high voltages and prevent high-energy transients from damaging the circuit. Additionally, the device has an integrated charge pump for increased ESD protection, further enhancing its suitability for use in high-voltage applications.
In conclusion, the CSD19537Q3T is a single MOSFET commonly used in power management and digital logic applications. It is easy to use, as it has an integrated charge pump for increased ESD protection and robust avalanche characteristics. The device is suitable for many purposes, including DC-DC conversion, switched-mode power supplies, and low-voltage circuits. Its working principle is simply turning the circuit on or off in response to suitable voltage applied on the gate, with the on-resistance of the device determined by the gate voltage.
The specific data is subject to PDF, and the above content is for reference
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CSD19537Q3T Datasheet/PDF