DMN1029UFDB-13

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The DMN1029UFDB-13 is a family of bidirectional MOSFETs arrays that are used in many practical applications. The family consists of two separate depletion mode devices, the DMN1029 and the UFDB-13. Each device can be used in different applications, depending on the needs of the user.

The DMN1029 devices are designed for providing isolated power control and switch-mode power conversion. They provide low on-resistance and high output current. They are also resistant to electrostatic discharge (ESD) and have a low gate to body capacitance for improved switching performance.

The UFDB-13 devices are designed for automotive electronics, such as in-vehicle entertainment systems and navigation systems. They are suitable for providing isolated power control with a low on-resistance and high current capability. Their low gate to body capacitance results in a high level of surge protection.

The working principle behind both devices is the same. They consist of a bidirectional MOSFET array with a “common source” transistor and multiple isolated gate transistors. Each isolated gate transistor is connected to a gate or drain/source terminal of the array. When the gate voltage of a gate transistor is applied, the corresponding source/drain terminal is “open” and current can flow through the array.

When multiple gate transistors are connected in parallel, very high current can be obtained. The gate capacitance of the device can be used for low-ripple power conversion or for ESD protection.

The DMN1029UFDB-13 family of MOSFETs arrays is an ideal choice for applications such as power conversion, switched-mode power supplies, ESD protection, automotive electronics, and in-vehicle entertainment systems. The bidirectional MOSFETs provide low on-resistance and high output current while being resistant to ESD. The low gate to body capacitance allows for low-ripple power conversion and high levels of surge protection.

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