DMN15H310SK3-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 155°C (TJ)
Power Dissipation (Max):	32W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	405pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8.7nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	310 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.3A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMN15H310SK3-13 is an N-channel MOSFET which is an abbreviation for metal-oxide-semiconductor field-effect transistor. It is a single field-effect transistor which is used in low-power switching applications such as low-voltage DC/DC converters, power management circuits, and logic level dumping circuits.This type of MOSFET generally has features such as low on-resistance, short switching times, low capacitance, and a range of breakdown voltages. This makes it ideal for use in switching applications where space and power maximsation are essential. The particular example of the DMN15H310SK3-13 offers an impressive maxiumon-state drain current of 13A, a drain-source breakdown voltage of 30V, and a drain-source on-resistance of 2.8 milliohms.The MOSFET works by controlling the voltage which is applied to its gate. The control voltage is a special combination of both a well-defined voltage threshold and a built-in Miller capacitance between the gate and drain. When the voltage drop across the gate and drain is beyond the predetermined voltage threshold, electrons flow from the drain to the gate, which causes a lateral movement of electrons from the source to the drain. This process is usually referred to as inversion, because electrons which are normally trapped between the source and drain are allowed to diffuse through the gate structure.The current which passes through the drain depends on the strength of the applied gate voltage, which in turn depends on how much gate current is allowed to flow into the gate. When the gate voltage is above the threshold level, an inversion layer of electrons forms between the source and drain, and these electrons will act as a conducting channel. This channel allows the current to flow through the drain, which is known as the drain current or drain-source current.The DMN15H310SK3-13 is a perfect example of the type of single field-effect transistor which is used in low-power switching applications. The low on-resistance, short switching times, low capacitance, and wide range of breakdown voltages make it the ideal choice for a variety of applications. Furthermore, the combination of low voltage threshold and Miller capacitance between the gate and drain allow for efficient current switching without excessive power consumption.

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