Allicdata Part #: | DMN10H100SK3-13DITR-ND |
Manufacturer Part#: |
DMN10H100SK3-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 18A TO252 |
More Detail: | N-Channel 100V 18A (Tc) 37W (Tc) Surface Mount TO-... |
DataSheet: | DMN10H100SK3-13 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1172pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 3.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN10H100SK3-13 is a single N-Channel Enhancement Mode MOSFET designed for use in the latest switching and amplification circuits. As one of the most versatile components available today, DMN10H100SK3-13 can be used in a dizzying array of applications, from high power circuits to high frequency data transmission.
The general principle of operation for DMN10H100SK3-13 is that current is passed through a conductive channel of the conducting source-drain terminal. The conductive channel is modulated by a control gate having an input voltage potential. This control gate input voltage can be supplied externally or by the same power supply used to drive the MOSFET itself.
The MOSFET is composed of three major elements: the source terminal, the drain terminal and the control gate. The source terminal is typically connected to the drain terminal and the control gate is often connected directly to the drain terminal. The current flowing through the channel is dependent upon the voltage applied to both the source and drain terminals. This voltage is adjusted by the control gate, with higher voltages causing the MOSFET to conduct more current through its channel. This enables the MOSFET to act as a switch or as an amplifier.
DMN10H100SK3-13 has some excellent characteristics which make it ideal for use in a wide range of applications. It has a maximum voltage rating of 10V, a maximum current rating of up to 100A and a maximum power dissipation of up to 3W. It also has an extremely fast switching speed and an operating temperature range of -55°C to +170°C. In addition, its on-resistance rating is quite low and it operates with almost no input or output capacitance.
DMN10H100SK3-13 is commonly used in applications such as motor controllers, DC-DC power converters, audio amplifiers and power supplies. It can also be used for high frequency switching, digital signal processing and signal conditioning applications. In fact, with the wide variety of applications for DMN10H100SK3-13, it can almost be considered an all-purpose component, suitable for use in almost any type of circuit.
The robust design and excellent characteristics of DMN10H100SK3-13 make it an excellent choice for a wide range of applications. Its low on-resistance rating and excellent switching speed make it highly efficient and suitable for more demanding applications. This, combined with its relatively low cost, makes it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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