| Allicdata Part #: | DMN1017UCP3-7-ND |
| Manufacturer Part#: |
DMN1017UCP3-7 |
| Price: | $ 0.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 12V 7.5A X3-DSN1010 |
| More Detail: | N-Channel 12V 7.5A (Ta) 1.47W Surface Mount X3-DSN... |
| DataSheet: | DMN1017UCP3-7 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.15000 |
| 10 +: | $ 0.14550 |
| 100 +: | $ 0.14250 |
| 1000 +: | $ 0.13950 |
| 10000 +: | $ 0.13500 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | 3-XDFN |
| Supplier Device Package: | X3-DSN1010-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.47W |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1503pF @ 6V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 3.3V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 17 mOhm @ 5A, 3.3V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 3.3V |
| Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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DMN1017UCP3-7 is a low on-resistance N-channel enhancement mode power Mosfet which is specifically designed for power switching applications. It is a single-ended device that can be used for many different applications such as motor control, DC/DC converters, PWM control and more.
The DMN1017UCP3-7 features a low on-resistance of 0.117 Ω, which enables it to effectively handle high switching frequencies and high currents. It also has a drain–source voltage rating of 100V, which allows it to safely handle high voltage power applications.
The main application fields for the DMN1017UCP3-7 include power switching, motor control, DC/DC converters, PWM control, and more. It can be used in a wide range of applications due to its high current rating, high voltage rating and low on-resistance.
The working principle of the DMN1017UCP3-7 is based on the same principle as other transistors and MOSFET devices. It uses the movement of electrons between the source and drain terminals to switch the current between them. The gate terminal controls the amount of current passing between the source and drain terminals. When a voltage is applied to the gate, the extra electrons increase the current passing between the source and drain terminals and switch the device on.
The gate and drain terminals of the DMN1017UCP3-7 must be kept at the same potential for proper operation. When the gate and drain terminals are kept at different potentials, the on/off behaviour of the device can be affected, leading to poor performance.
The DMN1017UCP3-7 is a versatile and reliable device that can be used for many power switching applications. Its low on-resistance and high voltage rating enable it to handle high frequency and high current applications with ease. Its working principle is based on the same principles as other transistors and MOSFETs, and it requires the gate and drain terminals to be kept at the same potential for proper operation.
The specific data is subject to PDF, and the above content is for reference
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DMN1017UCP3-7 Datasheet/PDF