DMN10H220L-13 Discrete Semiconductor Products

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The DMN10H220L-13 is an N-channel enhancement mode MOSFET or metal-oxide-semiconductor field-effect transistor that consists of two source terminals, two drain terminals and a gate terminal. It is made of gallium arsenide and has a maximum power rating of 13 watts. Its primary application field is general purpose power switching; however, it can also be used for automotive, appliance, and industrial control applications.

A MOSFET works by allowing electrical current to flow from its source to its drain when an electric field is applied to its gate terminal. When a voltage is applied to the gate, a channel is formed between the source and drain, and current starts flowing. The voltage applied to the gate controls the width of the channel and, in turn, the amount of current flowing from the source terminal to the drain terminal. If the voltage applied to the gate is zero, the channel is closed and no current is allowed to pass. The DMN10H220L-13 is an enhancement MOSFET, which means that it is designed to provide the most current when the gate voltage is higher than the source voltage.

The DMN10H220L-13 is a single MOSFET and does not require additional components such as drivers or current limiting. It is designed to switch large loads such as motors, actuators and other power switching applications. Its high current capacity and low on-resistance allows it to handle large amounts of current with minimal power loss. It also has low junction and gate capacitances, making it suitable for high speed switching applications. Additionally, the DMN10H220L-13 is designed to withstand large voltage and current spikes, making it suitable for automotive and industrial applications.

The DMN10H220L-13 has many advantages over other types of MOSFETs, such as its low gate charge, which improves its switching performance, and its low gate-to-drain capacitance, which reduces its input capacitance. It is also able to withstand high-temperature environments, making it a good choice for harsh industrial applications. Additionally, the DMN10H220L-13 can be used in either through-hole or surface mount applications. This makes it a versatile and reliable solution for many projects.

In summary, the DMN10H220L-13 is an N-channel enhancement mode MOSFET. It is primarily used for general purpose power switching, but it can also be used for a variety of automotive, appliance, and industrial control applications. It has a maximum power rating of 13 watts and can switch large loads with minimal power loss. Additionally, it has a low gate charge so it is suitable for high speed switching applications, and its low junction and gate capacitances reduce its input capacitance. It is also designed to withstand large voltage and current spikes, making it suitable for harsh industrial applications. Finally, it can be used in both through-hole and surface mount applications. Therefore, the DMN10H220L-13 is an efficient and reliable solution for many power switching projects.

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