DMN1019USN-7

Vgs(th) (Max) @ Id:	800mV @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SC-59
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	680mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2426pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	50.6nC @ 8V
Series:	--
Rds On (Max) @ Id, Vgs:	10 mOhm @ 9.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 2.5V
Current - Continuous Drain (Id) @ 25°C:	9.3A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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// DMN1019USN-7 has been popular in the field of semiconductor devices and electronics. According to its data sheet, this type of power transistor is manufactured by a company in Hong Kong. The company claims that DMN1019USN-7 transistors are designed for high power and reliability applications with a wide range of operating temperature from -55 to +125℃. The device is also suitable for a wide range of capacitive and resistive loads in both AC and DC systems.As a power transistor, the DMN1019USN-7 is classified as a field effect transistor (FET). FETs are transistors that are usually small signal devices that are operated by the application of an electric field and can be used for both power and signal applications. The FET operates on an electric field that is selectively applied to the gate of the device. This creates a conductive channel between the source and drain contacts and results in a current flow when the gate voltage is applied.The DMN1019USN-7 is a single-channel FET and is specifically designed as a power transistor. This means that it can handle larger amounts of current than other FETs. In its basic operating principle, the device operates in the same way as any other FET. The gate voltage is applied to the device and this creates a conductive channel between the source and drain contacts. This allows current to flow through the device when the voltage is applied.In order to ensure the safe operation of the DMN1019USN-7 transistor, it is important to follow all the safety precautions and guidelines that are outlined in the company\'s data sheet.The DMN1019USN-7 is a great choice for a variety of high power applications where reliability is of prime concern. It is suitable for use in applications such as power switching and amplifier circuits as it has very low on-resistance and low forward voltage drop.Furthermore, the DMN1019USN-7 power transistor exhibits excellent thermal performance due to its excellent thermal design and construction. This ensures that the device does not overheat even when subjected to long periods of operation.In conclusion, the DMN1019USN-7 is an excellent choice for ensuring reliable operation in high power and high current applications. It has an excellent thermal design and construction and is suitable for a wide range of capacitive and resistive loads in both AC and DC systems.

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