DMN10H220LQ-13

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.3W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	401pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	8.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	220 mOhm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	1.6A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMN10H220LQ-13 is a single-channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) designed to provide high current capacity and maximum control with minimum power requirements. It features an isolated packaging and a high-speed switching capability.In general FETs use the principle of semiconductor diode operation to control the flow of current through the device. In order to understand the operation of the DMN10H220LQ-13, one must first look at the structure of this MOSFET. It has a source terminal, a gate terminal, and a drain terminal. The most important parts of the gate terminal are the gate oxide and the gate contact. The gate oxide is composed of an intersecting grid of thin metal layers called the ‘gate dielectric’, which acts as an insulating layer between the gate and the rest of the FET. When a voltage is applied to the gate terminal, a strong electric field is generated between the gate oxide and the gate contact. This electric field makes it possible for electrons to be transferred from the gate contact to the gate oxide, forming a conductive channel between the source and drain terminals.The conductive channel enables current to flow through the device, and the strength of the channel determines the amount of current that is allowed to flow through the device. By controlling the voltage applied to the gate terminal, the user can control the magnitude of current being allowed to flow through the channel. This allows the user to control the input current, output current, and other characteristics such as speed and stability.Another important feature of the DMN10H220LQ-13 is its isolation packaging. On the chip, there is a layer of insulation between the terminals and the gate dielectric which helps to prevent damage to the gate dielectric due to thermal expansion or contraction. This also helps to reduce the amount of power dissipated from the device, thus allowing for improved circuit efficiency.The DMN10H220LQ-13 is used in a variety of applications, including motor control, home theatre systems, and automotive systems. In motor control, the device is used to control the speed and torque of a motor. By controlling the magnitude of the input current, the user can control the speed of the motor. In automotive systems, the device is used to control the fuel injector and the spark plugs, allowing for improved fuel efficiency and engine performance. In home theatre systems, the DMN10H220LQ-13 is used to control the outputs of various audio and video signals, as well as the input signals from other components such as a television, CD player, or DVD player. By controlling the strength of the input and output currents, the user can adjust the volume, clarity, and balance of the sound.In summary, the DMN10H220LQ-13 is a single-channel MOSFET designed to provide high current capacity and maximum control with minimum power requirements. It features an isolated packaging and a high-speed switching capability, making it an ideal device for a wide range of applications. By controlling the voltage applied to the gate terminal, the user can control the magnitude of current being allowed to flow through the channel. This makes the DMN10H220LQ-13 an essential component in motor control, home theatre systems, and automotive systems, where it can be used to control the speed and torque of a motor, or to adjust the volume, clarity and balance of audio and video signals.

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