Name: DMN1019USN-13
Brand: Diodes Incorporated
SKU: DMN1019USN-13DITR-ND
Price: 0.08 USD
Availability: InStock

Allicdata Part #:	DMN1019USN-13DITR-ND
Manufacturer Part#:	DMN1019USN-13
Price:	$ 0.08
Product Category:	Discrete Semiconductor Products
Manufacturer:	Diodes Incorporated
Short Description:	MOSFET N-CH 12V 9.3A SC59
More Detail:	N-Channel 12V 9.3A (Ta) 680mW (Ta) Surface Mount S...
DataSheet:	DMN1019USN-13 Datasheet/PDF
Quantity:	1000

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Specifications

Vgs(th) (Max) @ Id:	800mV @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SC-59
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	680mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2426pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	50.6nC @ 8V
Series:	--
Rds On (Max) @ Id, Vgs:	10 mOhm @ 9.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 2.5V
Current - Continuous Drain (Id) @ 25°C:	9.3A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Description

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DMN1019USN-13 Transistor is a single insulated gate field effect transistor (IGFET) that is widely used in modern CMOS integrated circuit design. It is a small and relatively economical transistor, which makes it attractive for a variety of applications. This article outlines the field and working principle of the DMN1019USN-13, with a focus on how it works and how it is used.The DMN1019USN-13 is a dual-gate field effect transistor. It is a three-terminal device that is structurally similar to the MOSFET. However, unlike the MOSFET, the DMN1019USN-13 is designed so that the drain and source are both tied together internally. This makes it ideal for use in digital logic applications where both terminals must have the same potential when the device is in an ON state.The DMN1019USN-13 is typically used as an inverter, although other logic functions are possible. It is also used in switching applications, where its high-speed switching capability and low on-resistance are desirable.The operation of the DMN1019USN-13 is based on the principles of field effect transistors. In a FET, the gate terminal is insulated from the other two terminals, and this allows the current, or voltage, to be controlled using a gate voltage.When the gate voltage is high, the device is "on". This means that current can flow between the drain and the source, making it possible for the device to act as an amplifier. When the gate voltage is low, the device is "off" and current cannot flow between the drain and the source. Thus, the device can also act as a switch. This is the principle of operation for all types of FETs, including the DMN1019USN-13.The DMN1019USN-13 is also well-suited for use as a switched-capacitor filter, primarily because of its high switching speed. It is also used in analog applications, where its low output impedance is ideal for making matched components. Finally, it is commonly used in power management, where its low on-resistance and low voltage drop make it ideal for applications such as power control, voltage regulation, and energy harvesting.In summary, the DMN1019USN-13 is a versatile single insulated gate field effect transistor (IGFET) that is widely used in CMOS integrated circuit design. It has a variety of applications, including logic functions, switching, analog applications, switched-capacitor filters, and power management. Its operation is based on field effect transistor principles, with a high gate voltage resulting in an "on" state and a low gate voltage resulting in an "off" state.

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DMN1019USN-13DITR-ND

DMN1019USN-13

Discrete Semiconductor Products