DMN10H170SFG-7 Allicdata Electronics
Allicdata Part #:

DMN10H170SFG-7DITR-ND

Manufacturer Part#:

DMN10H170SFG-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 2.9A POWERDI
More Detail: N-Channel 100V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Sur...
DataSheet: DMN10H170SFG-7 datasheetDMN10H170SFG-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 940mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870.7pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 122 mOhm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN10H170SFG-7 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with an excellent switching combined with superior low RDS(on). It is commonly used to provide electrical control of current or voltage in related power control applications.

This MOSFET is a voltage-controlled device, which means it is sensitive to the voltage applied to its gate terminal. When the gate voltage is sufficiently high, it allows current to flow through it easily – this is also known as being ON. Conversely, a low gate voltage causes barely any current to flow – it is OFF. In addition to this, the DMN10H170SFG-7 has a low ON-resistance, which makes it an ideal device to be used as the low-consumption switch in datasheet.

The DMN10H170SFG-7 MOSFET is highly recommended for applications such as automotive, appliance and power supply design, computer/telecom power systems, DC-DC converters, as well as lighting systems. Moreover, this MOSFET can be used in high power switching circuits with Vgs range from -3V to 16V and drain current up to 17A. In addition, its low drain-source ON-resistance (RDS(on)) and ultra low gate charge (Qg) makes it ideal for applications requiring low conduction losses and fast switching.

One of the most important features that make the DMN10H170SFG-7 MOSFET so popular is its working principle. It relies on the effect of electrostatic charge to control the flow of current. The MOSFET has a gate, drain and source, which are all connected to the silicon substrate. When the gate is provided with a positive voltage, it attracts electrons to the silicon substrate, allowing current to flow through the drain and source. When the gate voltage is negative, the electrons are repelled back and the flow of current is blocked, making the MOSFET switch off.

In conclusion, the DMN10H170SFG-7 is a single N-Channel MOSFET that is capable of switching signals with ease and low power consumption. Its various applications range from automotive and power supply design to computer and telecom power systems. Its working principle utilizes electrostatic charge to control the flow of current and turn it ON or OFF. Its low ON-resistance and ultra-low gate charge are ideal for applications requiring low conduction losses and fast switching. The DMN10H170SFG-7 may be the perfect choice for you.

The specific data is subject to PDF, and the above content is for reference

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