DMN1008UFDF-13 Allicdata Electronics
Allicdata Part #:

DMN1008UFDF-13DITR-ND

Manufacturer Part#:

DMN1008UFDF-13

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH30V SC-59
More Detail: N-Channel 12V 12.2A (Ta) 700mW (Ta) Surface Mount ...
DataSheet: DMN1008UFDF-13 datasheetDMN1008UFDF-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.08194
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 995pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 8V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 8 mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN1008UFDF-13 is a Single FET MOSFET that can be classified in the category of Transistors – FETs and MOSFETs. It is a natural choice for engineers and hobbyists who want a higher-performing device that can be used in a range of applications.

This device is a discrete, lateral double-diffused metal-oxide semiconductor field-effect transistor (LDMOSFET). It features a high frequency and breakdown voltage which allows for higher performance in a number of applications. The figure below shows a schematic representation of the integrated package of the DMN1008UFDF-13.

DMN1008UFDF-13

The DMN1008UFDF-13 is designed specifically as a switching device. It is a low resistance device ideal for applications requiring higher levels of voltage and current, such as power distribution in motor control, automotive, consumer electronics and industrial applications. It can also be used in Li-ion battery charger designs that require a high voltage, current and power switching capability.

The device is capable of operating at a wide range of frequencies, from 3GHz to 30GHz, and is suitable for switching frequencies up to 4GHz. The operating voltage range is from 4V–12V, allowing it to be used in a variety of applications. The ultimate rated drain-to-source voltage is 120V, enabling it to handle high voltages.

The DMN1008UFDF-13 features a low ON-resistance of 45 mOhms and is highly thermally and body-drain efficient. The current carrying capability is rated at 2.3 A peak and 10 A pulsed. This indicates that it is an ideal choice for high voltage and high current applications.

The working principle of the DMN1008UFDF-13 is based on the field effect-transistor concept. When a voltage is applied to the gate of the transistor, the electric field created by the gate modulates the carrier concentration in the region beneath the gate, thus controlling the current through the source-drain channel. It operates as a voltage-controlled device that is used to regulate the current flow between the source and drain. This makes it ideal for use in power supplies, motor control, automotive, and industrial applications.

The DMN1008UFDF-13 is an ideal device for a wide range of applications due to its high frequency, high voltage and high current handling capabilities. Its low resistance and efficient thermal and body-drain characteristics make it a great choice for high-performance applications. This makes it an excellent choice for applications that require robust operation, high-performance and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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