DMN13H750S-7

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The DMN13H750S-7 is a TVS diode array packaged in a three-lead SOT-23 package. It contains two low capacitance diodes connected in opposite direction. This TVS diode array features low leakage current and fast response time. Its operating temperature range is between -55°C to +125°C and its ESD rating is to 15kV (human body model).

The DMN13H750S-7 is a single MOSFET that can be used in power management applications. It has a maximum drain-source voltage (VDS) of 750V, a maximum drain current (ID) of 0.8A, and a maximum power dissipation (PD) of 1W. The single MOSFET is used in low voltage, high frequency converters, SMPS, and voltage control applications.

The DMN13H750S-7 has a low on-resistance, reducing power dissipation and increasing efficiency. It also has a low gate charge (Qg), reducing switching losses and increasing system efficiency. Furthermore, it has a low gate-source threshold voltage (VGS(th)), allowing it to switch quickly and consume less power.

The working principle of the DMN13H750S-7 single MOSFET is very simple. It uses a flow of electrons to conduct electricity in one direction. The current is controlled by the gate voltage applied to the MOSFET. When the gate voltage is low, the MOSFET acts as an open switch, with no current flowing between the source and drain, and the device can be used as an “off” switch. When the gate voltage is high, the MOSFET acts as a closed switch, and the current can flow between the source and drain, and the device can be used as an “on ”switch.

The DMN13H750S-7 single MOSFET is ideal for applications where power dissipation, size and cost are of concern. It can be used for a wide variety of applications such as motor control, AC/DC and DC/DC power conversion, voltage regulation, switching power supplies and more. Its small size and low profile allow it to be used in many applications where space is limited. Its low power and fast response time make it a great choice for low power applications.

The DMN13H750S-7 single MOSFET can be used in a wide variety of power management applications due to its low voltage, high frequency operation and low power dissipation. Its low on-resistance helps reduce power dissipation and increase efficiency for the entire system, and its low gate charge helps reduce switching losses and increase efficiency. Furthermore, its low gate-source threshold voltage allows it to switch quickly and consume less of the system’s power. The DMN13H750S-7 is an excellent choice for power management applications due to its size, performance, and low cost.

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