DMN1003UCA6-7 Discrete Semiconductor Products

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	--
Current - Continuous Drain (Id) @ 25°C:	--
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	56.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	3315pF @ 6V
Power - Max:	2.67W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-SMD, No Lead
Supplier Device Package:	X3-DSN3518-6

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N-Channel MOSFETs are semiconductor devices that are commonly used in voltage regulation and power supply applications. The DMN1003UCA6-7 is a special type of N-Channel MOSFET that is well known for its superior performance and reliability. The DMN1003UCA6-7 is part of a family of N-Channel MOSFETs made with a special type of silicon that is known as Ultra Low Capacitance (ULC). A MOSFET is an active two-terminal semiconductor device that is commonly used to control the flow of electricity. It consists of three regions: lightly doped substrate, heavily doped source, and a channel region. The heavily doped source region injects either electrons or holes into the substrate, and the channel region is used to form the body of the transistor. The gate is used to control the amount of current flowing through the MOSFET. The DMN1003UCA6-7 is an array of sixteen N-Channel MOSFETs that have a maximum drain-source voltage of 30V. They are designed to provide superior switching performance and low on-state resistance (RDS(on)). Their packages have a low-profile and low-inductance design to minimize switching noise and thermal resistance.The DMN1003UCA6-7 MOSFETs are commonly used in power converters, power supplies, and other applications where high power density and low power losses are required. The combination of their superior performance and small package makes them ideal for these applications. They can be used in various types of circuits such as in motor control circuits or in DC-DC converters. Additionally, they can also be used in switching power supplies and other applications which require the switching of high voltage and high current. The working principle of the DMN1003UCA6-7 MOSFETs is relatively simple. When the gate of the device is at a higher voltage than its source, it is said to be in its on-state. This causes the channel to be open and current to flow through the MOSFET. When the source is at a higher voltage than the gate, it is said to be in its off-state and the channel is closed, preventing the flow of current. The DMN1003UCA6-7 MOSFETs are also very efficient in their switching performance and are capable of switching between their on-state and off-state at very fast speeds. This makes them ideal for applications such as motor control, DC-DC converters and switching power supplies. Additionally, their low on-state resistance ensures that less power is dissipated and transferred as heat, making them more reliable and preventing possible failure.In conclusion, the DMN1003UCA6-7 is a highly reliable and efficient type of N-Channel MOSFET that is well suited for applications where speed and efficiency are both important. Its low on-state resistance, fast switching speeds and small package size make it ideal for many different types of applications. Its low profile and low inductance design contribute to its excellent performance, making it one of the most reliable and efficient MOSFETs available.

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