Allicdata Part #: | DMN1019UVT-13DI-ND |
Manufacturer Part#: |
DMN1019UVT-13 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 12V 10.7A TSOT26 |
More Detail: | N-Channel 12V 10.7A (Ta) 1.73W (Ta) Surface Mount ... |
DataSheet: | DMN1019UVT-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.08436 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.73W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2588pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 50.4nC @ 8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 9.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10.7A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN1019UVT-13 is a single, P-Channel, enhancement mode, depletion mode, and voltage controlled field effect transistor (FET) that is widely used in general purpose and power electronics applications. Its low on-resistance, high frequency switching and low ‘Miller plateau’ characteristics make it suitable for use in power electronics applications such as motor control, LED lighting, high voltage DC-DC converters, switching supplies, and server equipment.
The DMN1019UVT-13 is constructed using a planar polysilicon gate process, which contributes to its excellent switching performance and low on-resistance. The low on-resistance enables it to deliver current more efficiently than MOSFETs of the same size, while its small physical size (3.3mm footprint) makes it suitable for use in high density applications.
The DMN1019UVT-13 operates in either enhancement mode or depletion mode. The gate threshold voltage determines the applied voltage at which the transistor can be turned on or off. Depending on the particular application, this threshold voltage can be adjusted over a wide range for either enhancement or depletion mode.
The DMN1019UVT-13 relies on a voltage controlled gate voltage to maintain its ‘on’ or ‘off’ state. As the gate voltage is increased, the ‘Miller plateau’ increases, allowing for a greater range of gate voltages to be used in order to effectively regulate the switching of the transistor. The ‘Miller plateau’ also serves as a way to limit damage to the FET due to excessive voltage or current being passed through the gate.
The DMN1019UVT-13 has a wide variety of applications in both general purpose and power electronics. It can be used to build voltage converters, switches and inverters, motor controllers, LED drivers, contactors and power supplies. It can also be used in analog circuits, such as audio amplifiers, to control the level of current being passed. In addition, the DMN1019UVT-13 can also be used in high voltage DC-DC converters and in server equipment, such as uninterruptible power supplies.
The DMN1019UVT-13 is an excellent choice for those looking for a reliable, high-performance FET with a small footprint and low power consumption. Its wide range of applications and low on-resistance make it a great choice for many power electronics applications, including but not limited to those mentioned above.
The specific data is subject to PDF, and the above content is for reference
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