DMN10H170SK3-13

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The DMN10H170SK3-13 is a type of field-effect transistor (FET) at the cutting edge of modern electronics. It is a single N-channel enhancement-mode FET with a maximum drain current rating of 20A and a Pulsed current rating of 95A. It features a drain-source Voltage of 175V, a gate-source voltage of 30V, an operating temperature range of -55 to +175C, and a maximum drain-source on-resistance of 17mR at 10V. Due to its exceptional performance capabilities, the DMN10H170SK3-13 is widely used in a variety of applications.

The DMN10H170SK3-13 is most commonly used in high-power applications such as audio amplifiers and power supplies for digital electronics. This makes it especially useful for harsh and industrial environments. It is also used in output stages of instrumentation amplifiers, as well as in high current switch driver applications, such as power transistors. Additionally, the DMN10H170SK3-13 is used in temperature measurement, such as in thermo-couples. It can also be utilized in low-level switching applications.

The DMN10H170SK3-13 is a voltage-controlled device, meaning that it has an input and output that operates on the same potential. The input is a Gate, which the user can control either manually or electronically through hardware, software, or other components. When the gate voltage receives an input and exceeds the threshold voltage, current flows from the Drain to the Source. This type of FET is known as enhancement-mode because it does not require a positive voltage on the gate to turn the current flow on.

DMN10H170SK3-13 is especially notable for its ultra-low on-resistance, which enables it to handle much higher currents than its competitors. Further, the transistors integrated protective features, such as thermal protection, SOA protection, and ESD protection, make it reliable in a variety of conditions. These features, combined with its overall performance capabilities, make the DMN10H170SK3-13 a top choice for numerous applications.

In conclusion, the DMN10H170SK3-13 is a versatile and dependable power MOSFET suited for a variety of applications. Its exceptional performance capabilities, including its ultra-low on-resistance, make it an excellent choice for high-power applications. Additionally, its integrated protective features allow it to remain reliably operational in even the harshest conditions. As a result, the DMN10H170SK3-13 is sure to be a suitable component for many unique solutions.

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