DMN1032UCB4-7

Vgs(th) (Max) @ Id:	1.2V @ 250µA
Package / Case:	4-UFBGA, WLBGA
Supplier Device Package:	U-WLB1010-4
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	900mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	4.5nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	26 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4.8A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

DMN1032UCB4-7 is a type of single enhancement-mode MOSFET or Metal Oxide Semiconductor Field Effect Transistor. It is designed and manufactured in a miniature package to be used in a variety of applications. The MOSFET is a three-terminal device, operated by a gate-injected gate bias voltage, and a drain-to-source voltage. The device has a power dissipation rating of 750 mW and a package size of 4 x 7 mm.

Types of MOSFET

MOSFETs are broadly classified into two types: N-channel MOSFETs and P-channel MOSFETs. DMN1032UCB4-7 is an N-Channel MOSFET. N-Channel MOSFETs are those with an N-type semiconductor material between the source and drain and a P-type substrate. P-Channel MOSFETs are those with a P-type semiconductor material between the source and drain and an N-type substrate.

Features and Benefits

The DMN1032UCB4-7 MOSFET offers numerous features and benefits. It is designed to provide an excellent thermal performance in terms of power dissipation, low voltage drop, and low on-state resistance. Additionally, its integrated capacitor reduces EMI susceptibility and noise. The device can also be used in a wide range of operating temperatures ranging from -55℃ to 150℃. It also benefits from a low gate charge, a low manufacture unit cost and consistent high reliability.

Application Fields

The DMN1032UCB4-7 MOSFET is widely used in various applications due to its features and benefits. These include automotive, telecom, computer and audio. Additionally, the device can be used in high-power switchmode power supply and pulse-width modulation (PWM) applications. It can also be used in over-voltage protection and power-conversion applications for motor control.

Working Principle

The working principle of the DMN1032UCB4-7 MOSFET is based on the flow of electrons between its source and drain. The device consists of three terminals: gate, source and drain. Applying a positive voltage at the gate creates an electric field which attracts the electrons from the source and pushes them towards the drain. This creates a conductive channel between the source and the drain, thus allowing current to flow through the device. The resistance of the channel is dependant on the applied voltage at the gate. The higher the voltage, the lower the resistance. By varying the gate voltage, the resistance of the channel can be changed to control the flow of current through the device.

Conclusion

In conclusion, the DMN1032UCB4-7 MOSFET is a type of single enhancement-mode MOSFET designed in a miniature package. The device integrates numerous features such as excellent thermal performance and low voltage drop. The device can also be used in a variety of applications, such as automotive, telecom, computer and audio. Additionally, the working principle of this MOSFET is based on the flow of electrons between the source and the drain. By varying the gate voltage, the resistance of the channel can be changed to control the flow of current through the device.

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