DMN10H170SVT-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	TSOT-26
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1167pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9.7nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	160 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMN10H170SVT-13 is a popular and widely-used single N-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is commonly used in high-voltage, high-current applications up to 17 A and 100 V. In this article, we will discuss the DMN10H170SVT-13’s application field, its characteristics, and working principle.

Application Field

The DMN10H170SVT-13 is a popular choice for use in high-voltage power application fields, such as automotive motor control, solar chargers, AC-DC power supplies, and high-power DC-DC converters. In these applications, the maximum DC voltage rating is 100V, and the maximum drain current rating is 17 A. The DMN10H170SVT-13 is extremely reliable and thermal-resistant, making it ideal for high current or higher-power applications. The device is also well-suited for use in energy conversion and power delivery applications.

Characteristics and Image

The DMN10H170SVT-13 is an enhancement-mode, single-channel MOSFET. It has an on-resistance of 3.2 mΩ, a capacitance at drain-source terminal of 100 pF, an actuation voltage of ±12 V, and an on-state gate drive (Vgs) of 12 V. The device has an image of a diagram of the standard outline with lead configuration, in addition to physical dimensions and pin instructions.

Working Principle

The working principle of a DMN10H170SVT-13 MOSFET involves the use of a gate voltage (Vgs) to control the device’s current flow from a source to a drain. When the gate voltage is applied at the gate terminal, electrons are attracted to the gate, which creates a thin metallic layer between the source and the drain. This layer is what allows current to flow between the source and the drain. When the gate voltage is removed, the electrons are repelled and the layer is no longer in effect, thus stopping the current flow. The DMN10H170SVT-13 has a maximum current carrying capability of 17A and a maximum operating voltage of 100V, making it an ideal choice for high power applications. Because it is an enhancement-mode device, the device is able to switch off quickly and efficiently, making it suitable for high-frequency applications. The DMN10H170SVT-13 is also a low-noise device, making it suitable for signal processing and high-speed applications. Its low gate threshold voltage and low input capacitance allow for minimal power loss and improved performance in high-frequency switching and signal processing applications.

Conclusion

The DMN10H170SVT-13 is a highly reliable single N-channel enhancement-mode MOSFET suitable for high-voltage, high-current applications up to 17A and 100V. The device is ideal for automotive motor control, solar charger applications, AC-DC power supplies, high-power DC-DC converters, energy conversion and power delivery applications. The device is also suited for high-frequency and signal processing applications because of its low gate threshold voltage and low input capacitance. Additionally, it is a thermal-resistant device capable of quickly and efficiently switching off when necessary.

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