DMN1150UFB-7B Discrete Semiconductor Products

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The DMN1150UFB-7B is a dual N-channel MOSFET transistor (Field Effect Transistor) for applications that require high-speed switching and low on-state resistance. It is an advanced MultiSIP (Multi-Semiconductor Packaged Integrated Circuit) product from Diodes Incorporated. The fan-out MOSFET transistor features two independent N-channel MOSFETs which are designed to replace traditional discrete components to provide a SPACE-save solution and alleviate design complexity. The DMN1150UFB-7B is available in a compact 8-pin package with a small form factor (1.27mm width) and is ideal for hand-held and other low-profile applications where saving space is paramount.

DMN1150UFB-7B has a wide range of applications in fields such as circuits for switching power, driving display panels and actuators, as well as pulse circuits, delay circuits, and power management. Its low on-state resistance and high-speed switching capability make it well-suited for display driver applications, offering superior switching performance and better signal transitions for optimal display quality. The DMN1150UFB-7B also has potential applications in pulse circuits and delay circuits, offering fast switching speeds and signal formations for accurate signal generation. Additionally, it can be used in power management, improving power efficiency and reducing power consumption in the system.

The DMN1150UFB-7B is an advanced integrated circuit, which consists of two N-channel MOSFETs that share a common source terminal. The two MOSFETs are controlled individually via the two respective Gate terminals. By applying a voltage to the Gate terminals, the source-drain path of the corresponding FET is closed, connecting the source and drain terminals, which allows current to flow through the FET. The on-state resistance of the FET is low, with R(ON) as low as 8 mOhms for a 5V Gate voltage. The off-state resistance of the FET is very high, preventing any current from flowing through it.

The high-speed switching capability of the DMN1150UFB-7B is complemented by its low reverse transfer capacitance and low body diode forward voltage. The device features a fast switching time of 75ns with a high dV/dt of 150V/ns, enabling an improved response time for optimized system performance. The reverse transfer capacitance of the device is relatively low at 4pF, reducing the turn-on and turn-off losses associated with conventional discrete MOSFETs. The body diode of the device has a low forward voltage drop, which helps reduce the dissipation during the diode’s reverse current.

The DMN1150UFB-7B is a great choice for both replacement of traditional discrete MOSFET components as well as new designs. Its low on-state resistance, high-speed switching capability, and low voltage body diode helps to optimize designs for improved system performance. Additionally, the device’s small size and space-saving package helps to save space and reduce system size in areas such as hand-held and other low-profile applications.

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