DMN13H750S-13

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The DMN13H750S-13 is a robust MOSFET from Diodes Inc. It features high speed switching, matcheable gate thresholds, low gate charge and low output capacitance. Its wide body design allows for easy handling and its low on-state resistance makes it one of the most efficient transistors available on the market. This makes the DMN13H750S-13 ideal for power converters, automotive applications and high speed digital circuits.

The DMN13H750S-13 is a single N-channel Enhancement Mode MOSFET. This means that when the gate voltage increases, the source-drain current increases. This is what makes it ideal for power conversion. It works in a wide voltage range, up to 750volts, and can handle currents up to 17A. It has a maximum power dissipation of 113W, a gate charge of 6nC and an on-state resistance of 0.2 mOhms. It also has a fast switching speed, making it suitable for high-frequency applications.

The DMN13H750S-13\'s robust construction makes it suitable for most applications. It has a dielectric withstand voltage of 1400V and its gate oxide layer is thicker than normal, making it resistant to electrostatic discharge. Its top-notch packaging allows for excellent thermal performance, with a thermal resistance of 0.38K/W. This allows it to better dissipate heat, making the DMN13H750S-13 ideal for applications with high power dissipation or high ambient temperatures.

The range of applications where the DMN13H750S-13 can be used is quite broad. Its low resistance and high current handling capabilities make it suitable for power converters, such as AC-DC, DC-DC and DC-AC. It is also very popular in automotive applications, where it can be used for diagnostics, lighting and audio systems. Finally, its fast switching speeds make it perfect for high speed digital circuits and power amplifiers.

In conclusion, the DMN13H750S-13 is a high-performance MOSFET from Diodes Inc. It features high speed switching, matcheable gate thresholds, low gate charge and output capacitance, wide body design and low on-state resistance. Its versatility makes it suitable for power converters, automotive applications and high speed digital circuits. It is a robust, efficient and reliable transistor, perfect for a wide variety of applications.

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