DMN10H120SFG-7 Allicdata Electronics
Allicdata Part #:

DMN10H120SFG-7DICT-ND

Manufacturer Part#:

DMN10H120SFG-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 3.8A POWERDI
More Detail: N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount Pow...
DataSheet: DMN10H120SFG-7 datasheetDMN10H120SFG-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 549pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT) 
Description

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The DMN10H120SFG-7 is a part of a single subsystem for pulse and data communications. It is a high functionality capable of reducing switching losses. It is also capable of providing high-speed switching of data over long periods of time efficiently. The DMN10H120SFG-7 is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used for high-power applications such as power supply and motor control.

Application and Working Principle of DMN10H120SFG-7

The DMN10H120SFG-7 is a N-channel enhancement mode MOSFET, and it is mainly used in circuits which require high-speed, high-power switching. It can be used in a wide range of circuits ranging from switching, output circuits, inverters, and high frequency amplifiers. Its application includes switch-mode power supplies, motor controllers, battery-powered devices, and high-frequency amplifiers.

The DMN10H120SFG-7 uses a simple and classic construction that involves the use of two electrodes. The two electrodes, known as the Gate and the Drain are responsible for controlling the flow of electrons from the Source to the Drain. The Gate electrode is connected to the positive terminal of the power supply and the Drain electrode is connected to the negative terminal. When a voltage is applied between the Gate-Drain electrodes, an inversion layer is formed underneath the gate and a suitable gate voltage causes electrons to start flowing from the Source and Drain. The electrical current flows from the Source to the Drain due to the electric field of the applied voltage. The electric field causes the electrons to move to the Drain and hence create a current.

The DMN10H120SFG-7 has multiple features and advantages. This includes low RDSon value, high breakdown voltage, low gate-capacitance, low parasitic leakage, and tight tolerances on the RDSon value. Its features make it ideal for high speed switching, low-voltage operation, and low power loss. The DMN10H120SFG-7 is also very resistant to temperature and is capable of operating in temperatures ranging from -55°C to 150°C.

The DMN10H120SFG-7 is also capable of providing protection from transient voltage. This is achieved by control of the gate current, which is responsible for triggering the switches. An overcurrent situation is automatically detected, and then the relevant switches are turned on in order to protect the circuit from excessive current. This allows for greater reliability and higher system stability.

The DMN10H120SFG-7 also allows for high-speed switching operations. It has a high switching frequency, which provides a fast switching time, resulting in an improved overall system performance. It is also capable of providing a fast turn-on time, making it suitable for high-power applications.

In conclusion, the DMN10H120SFG-7 is a power MOSFET that has a number of features, benefits and advantages. It is used in high-power applications such as power supply and motor control, and it allows for high-speed switching and low parasitic leakage. It has a high breakdown voltage and good temperature resistance, making it suitable for various types of applications. It also provides protection from transient voltage and fast switching operations, making it an ideal choice for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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