DMN1054UCB4-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMN1054UCB4-7DITR-ND |
Manufacturer Part#: |
DMN1054UCB4-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 8V 2.7A X1-WLB0808-4 |
More Detail: | N-Channel 8V 2.7A (Ta) 740mW (Ta) Surface Mount X1... |
DataSheet: | DMN1054UCB4-7 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | 4-XFBGA, WLBGA |
Supplier Device Package: | X1-WLB0808-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 740mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 908pF @ 6V |
Vgs (Max): | ±5V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMN1054UCB4-7 is a single, highly reliable, and cost-effective enhancement-mode, silicon N-channel MOSFET with an integrated Drain-Source diode. The MOSFET has been designed with special attention to its intrinsic properties and the packaging technologies used. It is suitable for switching applications, making it the perfect choice for a wide variety of power, control and communication circuits.
DMN1054UCB4-7 finds application in a variety of power supply, lighting, and motor control applications because of its superior current-carrying capability and unique functionality. It is ideal for analog control in motion and lighting applications, as it offers superior switching performance coupled with very low On-state resistance. Additionally, the range of source-drain current versus temperature and the low gate drive / charge needed makes it extremely suitable to improve system reliability.
The distinctive feature of the DMN1054UCB4-7 is its structure. It is constructed entirely from silicon and is composed of six zones: the gate, drain and gate electrodes, a gate oxide, a channel connection, and a contact. All of these are located on a single silicon chip, making the device extremely compact and efficient. The drain and the gate electrodes are isolated from each other by the gate oxide and thus, can be operated independently. The contact design ensures low contact resistance, which further increases device performance.
The basic working principle of the DMN1054UCB4-7 is similar to that of other single-channel MOSFETs. In its off-state, the MOSFET is completely non-conductive, due to the absence of an electrical field in the gate-oxide region. When an appropriate voltage is applied to the gate electrode, an electric field is induced in the gate-oxide region and the MOSFET is turned on, allowing current to flow between the drain and source. This current is limited by the drain-source resistance, which is a measure of the device’s on-state performance.
The DMN1054UCB4-7 is an extremely reliable and efficient device. It is suitable for high current, high voltage and low-voltage applications, as it provides superior switching performance and significantly low ON-state resistance. Furthermore, its on-board diode reduces reverse bias leakage, thus improving system reliability. This makes it an ideal device for analog control in lighting and motion control circuits where high performance and low power consumption are desired.
Overall, the DMN1054UCB4-7 is an ideal choice for a wide range of applications, from power supplies and lighting to motor control. Its unique design and packaging technology, coupled with its superior performance, make it an extremely versatile solution for a host of digital and analog circuits in various power, control, and communication applications.
The specific data is subject to PDF, and the above content is for reference
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