DMN1004UFDF-7 Allicdata Electronics
Allicdata Part #:

DMN1004UFDF-7-ND

Manufacturer Part#:

DMN1004UFDF-7

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 12V 15A UDFN2020-6
More Detail: N-Channel 12V 15A (Ta) 2.1W (Ta) Surface Mount U-D...
DataSheet: DMN1004UFDF-7 datasheetDMN1004UFDF-7 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12970
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2385pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN1004UFDF-7 is a type of transistor that belongs to the family of Field Effect Transistors (FETs), and more specifically, single MOSFETs. This particular device is mainly used for switch modulation, power management, and signal switching applications. It is available in a small, compact physical form that is perfectly suited for integration into compact circuits and equipment.

The DMN1004UFDF-7 is an ideal choice for many different kinds of control circuits, due to its low power consumption and high reliability. It is a Field Effect Transistor (FET) because, like other FETs, it works using an electric field that controls the flow of electrons across a semiconductor material. It is made up of two terminals, a source and a drain, with a gate terminal in between. Applying a voltage at the gate creates a conductive path from the source to the drain, through which current can flow.

Because of its robust design and low power consumption, the DMN1004UFDF-7 is well suited for a variety of applications, including remote control systems, alarm systems, power supply and control circuits, automotive electronics, and industrial automation systems. In a typical application, the FET is used as a switch, allowing current to flow through a device when a given voltage is applied to the gate. The FET can then be used to control the flow of energy in various types of circuits, and can act as an amplifier.

The working principle of the DMN1004UFDF-7 is relatively simple. When a given voltage is applied to the gate, the electrical field created will attract electrons to the gate. This then creates a conduction path from the source to the drain, allowing current to flow from the source to the drain. The FET can be turned on or off by simply adjusting the applied voltage at the gate, which allows for precise control of current flow in a circuit. This makes them perfect for applications where accurate control of current is required.

The DMN1004UFDF-7 is a durable and reliable device, making it a great choice for a variety of applications. Its low power consumption means it can operate at higher efficiencies than other transistors, which makes it perfect for integrated circuits and equipment. The robust design ensures it can handle high temperatures and has a long service life, making it extremely reliable and efficient. In addition, its low cost makes it a great choice for large-scale applications.

The DMN1004UFDF-7 is an excellent choice for many applications due to its high reliability, low power consumption, and robust design. Its versatility and accuracy make it ideal for use as a switch or amplifier in a variety of circuits, or for power management and signal switching. Its low cost and long life make it an attractive choice for large-scale applications where reliability and accuracy are essential.

The specific data is subject to PDF, and the above content is for reference

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