DMN3007LSSQ-13

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The DMN3007LSSQ-13 is a single N-Channel Enhancement Mode MOSFET (Metal Oxide Field Effect Transistor) specifically designed to improve system efficiency, reduce the amount of power lost, and enable significant design flexibility.

A MOSFET is a type of field-effect transistor device that works on a principle where current is controlled using the flow of electrons or electric charge in a channel of resistive material. This type of transistor allows voltage to control the resistance of a device. As a single N-Channel Enhancement Mode MOSFET, the DMN3007LSSQ-13 is designed to provide excellent switching performance with an efficient power-to-output ratio.

The DMN3007LSSQ-13 can be used in many types of applications. It is most commonly used for applications requiring high-speed switching, such as switched-mode power supplies and other AC/DC power controllers. It can also be used in low-power, high-efficiency applications such as inverters and DC/AC power converters.

In addition, the DMN3007LSSQ-13 is suitable for use in many digital and analog applications such as logic-level gates, buffers, and power regulators, as well as in low voltage motors. It can also be used in high-frequency, high-power applications such as in telecommunications equipment and motor control.

The DMN3007LSSQ-13 is designed to be an ultra-low resistance device, with an on-resistance of 30 mΩ @Vds = 4.5V. It features an absolute maximum rating of 30V, gate-source voltage at ±20V. The maximum power electromotively (PD) is 500mW and the maximum junction temperature is 150°C.

This transistors feature a Pb free lead finish, making it RoHS compliant. It is designed to be designed in an SO8 package, making it suitable for use in high-density, surface-mount layouts.

Ultimately, the DMN3007LSSQ-13 provides excellent high-speed switching performance, with a wide range of applications and a low on-resistance. It is suitable for use in many digital and analog applications and can help improve the overall efficiency of your design.

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