DMN3008SCP10-7 Allicdata Electronics
Allicdata Part #:

DMN3008SCP10-7-ND

Manufacturer Part#:

DMN3008SCP10-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET BVDSS: 25V 30V X4-DSN3415
More Detail:
DataSheet: DMN3008SCP10-7 datasheetDMN3008SCP10-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Active
Description

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DMN3008SCP10-7 is a single N-Channel MOSFET which is widely used in different applications. It has been widely used in various circuit designs due to its low ON-resistance, low gate charge and fast switching characteristics.

This MOSFET is constructed using an advanced N-Channel MOS technology which allows it to provide lower ON-resistance and gate charge. It has a drain-source breakdown voltage of 30V and current rating of 1.8A. It has a fast switching speed and a low gate voltage threshold.

The DMN3008SCP10-7 MOSFET is mainly used in various switching and power management applications such as motor control, relay drivers, relays, and power supply circuits. It is also used in audio amplifiers, DC-DC converters and battery-operated applications. It is also suitable for use in automotive, industrial, telecommunication and consumer electronics applications.

The working principle of the DMN3008SCP10-7 is based on the principle of a metal-oxide-semiconductor structure. This structure is composed of an oxide layer sandwiched between the source and drain, and an oxide layer covering the gate. This oxide layer acts to insulate the two electrodes, thus providing high performance and low on-resistance. When the gate voltage is applied to the MOSFET, the oxide layer creates a channel between the source and drain resulting in a current flow.

The DMN3008SCP10-7 MOSFET provides a wide range of characteristics such as low on-resistance, fast switching speed and a low gate voltage threshold. It is easy to use and can provide efficient power management solutions for various applications. Its high performance and low on-resistance make it an ideal choice for switching and power management applications. Its low gate charge makes it highly suitable for battery operated applications.

In conclusion, the DMN3008SCP10-7 MOSFET offers a wide range of characteristics that make it suitable for a variety of applications. Its low on-resistance, fast switching speed and low gate voltage threshold make it an ideal choice for many applications including motor control, relays drivers, relays, audio amplifiers, DC-DC converters and battery-operated applications. It is also suitable for automotive, industrial, telecommunication and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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