
Allicdata Part #: | DMN3033LDM-7DITR-ND |
Manufacturer Part#: |
DMN3033LDM-7 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 6.9A SOT-26 |
More Detail: | N-Channel 30V 6.9A (Ta) 2W (Ta) Surface Mount SOT-... |
DataSheet: | ![]() |
Quantity: | 3000 |
1 +: | $ 0.13000 |
10 +: | $ 0.12610 |
100 +: | $ 0.12350 |
1000 +: | $ 0.12090 |
10000 +: | $ 0.11700 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 755pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 6.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN3033LDM-7 is a P-Channel Power MOSFET, or metal-oxide-semiconductor field effect transistor. A MOSFET is a voltage-controlled power switch and is composed of a type “O” gate oxide and a substrate that provides a charge response under its gate. It is a device with a great potential for controlling power stages in electronic systems due to its favorable characteristics.
The DMN3033LDM-7 is a high-efficiency MOSFET, due to its low on-resistance. The N-channel drain-source on-resistance of this device is 30mΩ, with gate-source voltage ranging from 0V to 12V. This device can handle maximum peak current of 8A. This implies that this device can handle large currents for an affordable price, making it a very versatile and economical choice for various applications.
The DMN3033LDM-7 is ideal for applications where a high load current is required, such as in power supplies. It is also widely used in motor control and light dimming applications. This MOSFET is widely used in applications that require switching a DC load as its low gate-threshold voltage allows it to switch off quickly.
In terms of its working principle, the operation of the DMN3033LDM-7 is based on the principle of a field-effect transistor, which is a three-terminal device. It is composed of source, gate and drain terminals, with the source being the negative terminal and the gate and drain being independent.
When a voltage is applied between the source and the gate terminals, an electric field is generated between them, which causes electric charge to accumulate at the gate-channel interface. This causes an inversion in the channel, which further allows current to flow between the source and the drain terminals.
The density of the current is determined by the amount of the voltage applied to the gate. By increasing the gate-source voltage, the amount of current flow increases. It can be used to either switch ON or switch OFF the device, depending on how it is used.
As mentioned earlier, the DMN3033LDM-7 is a versatile device and can be used in a variety of applications. It is ideal for power supplies, motor control, and light dimming applications, as it can handle a large amount of current for an affordable price. Furthermore, its low on-resistance and gate-threshold voltage makes it ideal for switching DC loads.
The specific data is subject to PDF, and the above content is for reference
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