Allicdata Part #: | DMT6005LCT-ND |
Manufacturer Part#: |
DMT6005LCT |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET NCH 60V 100A TO220AB |
More Detail: | N-Channel 60V 100A (Tc) 2.3W (Ta), 104W (Tc) Throu... |
DataSheet: | DMT6005LCT Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.99616 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2962pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47.1nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The DMT6005LCT is a high-performance N-channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor). It is part of the P-Series of products from Diodes Incorporated and is designed to handle up to 25 amps at a voltage of 60 volts. This device has been optimized for low on-state resistance for achieving high power levels and efficient power delivery. It has a low-capacitance junction which allows for greater thermal stability, higher circuit frequencies, and more reliable operation.
The DMT6005LCT has a wide variety of applications, including power supplies, DC-DC converters, and motor control. It is particularly well suited as a power switch in applications such as DC motors, solenoids, and other electromagnetic actuation systems. The device can also be used in high-speed switching circuits, allowing higher frequencies and faster response times than traditional MOSFETs.
The basic working principle of the DMT6005LCT is that of the enhancement-mode MOSFET. The device operates by applying an electric field across the source and gate, creating a "channel" through which current can flow. When the voltage between the source and gate becomes high enough, the device will enter its "on" state, allowing current to pass through it. This can be used to control the current flowing through other components in the circuit, such as power transistors.
To ensure that the device can handle high levels of current, it is equipped with a number of protection features, including over-current protection, over-voltage protection, and thermal protection. Over-current protection helps prevent damage from over-current, which can happen when too much current is flowing through the device. Over-voltage protection kicks in when the voltage between the source and gate becomes too high. Thermal protection is there to protect the device from overheating, allowing the device to operate safely and reliably.
In summary, the DMT6005LCT is a reliable, high-performance N-channel MOSFET, which can be used in a wide variety of power-management applications. Its low on-state resistance, low-capacitance junction, and extensive protection features make it an ideal choice for those seeking a reliable, high-powered solution. With its ability to handle up to 25 amps of current at a voltage of 60 volts, it is one of the most reliable devices on the market.
The specific data is subject to PDF, and the above content is for reference
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