DMT6010LFG-13

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	PowerDI3333-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.2W (Ta), 41W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2090pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	41.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMT6010LFG-13 is aInsulated Gate Bipolar Transistor Field Effect Transistor (IGBT) for general purpose switching uses. It is designed for use in direct logic applications and can be used in both high power and low power circuits. The DMT6010LFG-13 is a field effect device that uses an insulated gate as the gate in order to control the flow of current through the channel. It is a complementary device, meaning it has two semiconductor materials, one P-type and the other N-type, in the same die.The construction of the DMT6010LFG-13 is extremely specialized and it is not possible to make it any other way. The structure of the IGBT has two regions, the emitter and the collector. The emitter region consists of two semiconductor regions, one N-type and one P-type. The N-type material is the source of electrons, while the P-type material is the destination of electrons. The emitter is also connected to the insulated gate, which consists of a silicon dioxide insulated layer on the surface of the substrate.When a positive voltage is applied to the gate, it allows for the passage of electrons from the N-type region to the P-type region. This creates a current that passes through the device. In the reverse bias, the opposite occurs, allowing for the blocking of current from the P-type to N-type region. Depending on the voltage applied to the gate, currents across the device can be varied. The DMT6010LFG-13 can be used in switching applications, and is particularly well-suited for high-current applications. This is because of its ability to handle larger than normal currents. It can be used in a variety of digital logic circuits, including direct logic applications, and is ideal for digital memory and storage devices, motor control and power switching applications.The DMT6010LFG-13 is an excellent choice for low-power applications because of its low on-state resistance. This low resistivity allows it to operate at lower current levels while still maintaining proper operation. This also allows the transistor to dissipate less heat, so it can be used in more confined spaces.Because the insulated gate prevents electricity from flowing, the DMT6010LFG-13 has a higher voltage breakdown strength than other transistors, which makes it well-suited for high voltage applications. It also has a higher load capacity, which means it can withstand more current. The DMT6010LFG-13 is also fully isolated, which eliminates the need for special isolation techniques, such as those used in high voltages semiconductor applications. The DMT6010LFG-13 is a versatile device and has a wide range of applications and applications. It can be used in industrial, automotive, and computer applications, as well as communications and consumer electronics. It is also ideal for uses in telecommunications, medical applications, power systems, and even renewable energy systems. The DMT6010LFG-13 is a versatile, reliable, and cost-effective choice for many applications.

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