FDD6670AS

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDD6670AS is a single-layer, power MOSFET (metal-oxide-semiconductor field-effect transistor) that belongs to Fairchild Semiconductor’s family of switching, power and logic MOSFETs. It is an efficient device with a simple construction, making it ideal for a wide range of applications, from high-voltage power supplies and power converters to low-voltage logic circuits. In this article, we will explore the application fields and working principles of FDD6670AS.

Application Fields

The FDD6670AS is a power MOSFET, which is suitable for use in a wide range of high-voltage power circuits. Its high maximum drain-source breakdown voltage of 650V allows it to be used in applications including switching, automotive, and industrial power supplies. Its wide operating temperature range of -55C to +175C allows it to be used in extreme temperature environments. The MOSFETs low on-resistance (RDS(on)) of 3.2 ohms at a 10V gate-source voltage will enable low voltage drops, as well as highefficiency in applications such as automotive, heavy-duty and direct DC-DC conversion.

The FDD6670AS is ideal for use in high-speed switching circuits and lower speed logic circuits. Its low gate-source capacitance and low gate-resistance make it suitable for use in high-speed switching circuits. It can switch in less than 20ns. Its low power consumption and small package size make it ideal for use in portable devices such as mobile phones, PDAs and hand-held game consoles.

The MOSFET is also suitable for use in low on-resistance logic circuits. It has a very low RDS(on) of 3.2 ohms at a 10V gate-source voltage. This low RDS(on) gives the FDD6670AS the ability to produce very accurate voltages and currents, allowing it to be used in applications such as high-value precision analog to digital converters. The power MOSFET is also suitable for use in circuits where low voltage and current drops are required, such as motor control, fan control and datasheet PWMs.

Working Principle

The FDD6670AS is a single-layer, power MOSFET. The device consists of two p-type regions separated by an n-type region. The two p-regions are known as the source and drain, and the n-region is known as the body or substrate. The body forms the conducting channel between the two regions. The control electrode is known as the gate and is made of a metal electrode insulated from the body by an oxide layer.

In operation, a voltage is applied to the gate to create an electric field. This electric field induces a charge on the body, which is known as the inversion layer. The inversion layer controls the conductivity of the channel by creating a region of higher conductivity between the source and drain. The amount of current flow is determined by the voltage difference between the gate and the source. As the voltage difference is increased, the current flow increases.

The FDD6670AS has a maximum drain-source breakdown voltage of 650V, which means that the maximum gate-source voltage must not exceed 650V. The maximum gate-source voltage of the FDD6670AS is 10V, which is far below the maximum drain-source breakdown voltage. This ensures that the device is protected from accidental overvoltage. The MOSFET also has a maximum drain-source on-state resistance of 3.2 ohms at a 10V gate-source voltage. This low on-state resistance ensures high efficiency in power circuits.

Conclusion

The FDD6670AS is a single-layer, power MOSFET, suitable for a wide range of applications, from high-voltage power supplies and power converters to low-voltage logic circuits. It has a maximum drain-source breakdown voltage of 650V, which allows it to be used in a variety of applications. It also has a low on-state resistance of 3.2 ohms, which makes it ideal for use in high-efficiency power circuits. The MOSFET has a small package size and low power consumption, making it ideal for use in portable devices.

The specific data is subject to PDF, and the above content is for reference