FDD6672A

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.2W (Ta), 70W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5070pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	46nC @ 4.5V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	8 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	65A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FDD6672A is a dual N-channel power MOSFET, very similar to other high power MOSFETs like IRF630N and TK6A66K. It is designed to be used either as an enhancement or depletion mode device, depending on the application. As such, it is capable of switching high currents, up to 12A, and has a low on-resistance, up to 0.082Ω.The FDD6672A is ideal for high efficiency power switching applications, where a small size, high efficiency and low power consumption are required. It is typically used in high power switching power converters, including DC to DC converters and AC to DC converters. It is also used in DC motor control and other high power switching applications.The FDD6672A is a single N-channel MOSFET, meaning it works by using an electric field to control the flow of electrons between the source and drain terminals. When a positive voltage is applied to the gate, electrons move from the source terminal to the drain terminal, creating a channel in the MOSFET\'s substrate called the inversion layer. This causes current to flow through the MOSFET, and the current is controlled by the voltage applied to the gate. When the voltage is removed, the MOSFET is said to be "off", and no current will flow through it.The FDD6672A is also capable of operating in either enhancement or depletion mode, depending on the application. In enhancement mode, a voltage applied to the gate creates an inversion layer, allowing current to flow through the MOSFET. In depletion mode, a voltage applied to the gate creates an inversion layer, preventing current from flowing through the MOSFET.The FDD6672A is also known for its low Ron, or on-resistance, which is a measure of the device\'s ability to dissipate heat or resist energy when current is flowing through it. It has an on resistance of up to 0.082Ω, which allows it to dissipate heat more efficiently and operate at higher current densities without damaging itself.Furthermore, due to its small size, the FDD6672A is ideal for applications that require compact designs and efficient thermal management. It also has a low parasitic capacitance and low gate charge, which increase its switching performance. These qualities make the FDD6672A an ideal choice for switching power converters, motor control applications and other high power switching needs.In conclusion, the FDD6672A is a powerful, efficient and reliable MOSFET that is ideal for high efficiency power switching applications. It features a low on-resistance, low parasitic capacitance and low gate charge, all of which make it a powerful choice for applications that require small size, high efficiency and low power consumption. Despite these advantages, the FDD6672A is also easy to use, making it a convenient and reliable choice for high power switching applications.

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