FDD6696

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FDD6696 is a type of N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a highly rated drain current of 18.9A and a maximum drain-source voltage of 350V. It is especially suited for applications that utilize high currenthandling and low power loss. This article will discuss the general application and working principles of the FDD6696.

Application Fields

The FDD6696 is ideal for applications that use high current capacity, especially in variable frequency control circuits that require high-speed switching, such as high-power switching systems, Pulse Amplitude Modulation (PAM), or Pulse Position Modulation (PPM). It is also suitable for variable current circuits and switching circuits where low on-resistance is needed. It can be used for switching DC motors or controlling resistive loads. Additionally, it can be used for high-voltage power supplies and lighting applications.

The FDD6696 is also suitable for high frequency switching, as it is designed for fast switching speed. It is ideal for efficiently operating wind power systems, servos, robotic circuits and motor speed, as well as automotive systems such as vehicle starters and LED control circuits.

Working Principles

The FDD6696 uses a N-channel MOSFET. It has a low on-resistance and high current rating; this is why it is suitable for high-power applications. An N-channel MOSFET basically consists of two terminals: the source and the drain. In order to switch the device on, a voltage must be applied between these two terminals. The source will then be connected to the low side of the circuit, while the drain will be connected to the high side of the circuit.

The Gate terminal is what in turned enables the FDD6696 transistor to work. When a positive voltage is applied to the Gate terminal, electrons from the source will be repelled away from the Gate terminal and instead attracted towards the drain. This causes current to flow from the source to the drain and the transistor will switch “ON”. When the Gate voltage is switched off, the current flow in the transistor will be stopped and the transistor will switch off.

The FDD6696 utilizes depletion mode, so the transistor will be off in the absence of any other bias signals. For this reason, it is commonly used as a control signal in applications requiring very low threshold voltage such as motor speed control circuits, where a signal from the controller is required to turn the motor on and off.

The FDD6696 is designed to be highly efficient. Its structure and design enable the device to minimize power dissipation and provide optimum temperature control. This in turn translates to improved reliability and a longer lifespan for the MOSFET.

In conclusion, the FDD6696 is a N-channel MOSFET specifically designed to handle high currents, which makes it an ideal choice for a range of applications. It has a wide range of application fields, most notably high-power switching systems, DC motor control, power supplies and lighting applications. Its efficient construction ensures superior temperature control and improved reliability; thus, making it the perfect choice for a variety of projects.

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