FDMA3028N Allicdata Electronics
Allicdata Part #:

FDMA3028NTR-ND

Manufacturer Part#:

FDMA3028N

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 3.8A 6MICROFET
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 3.8A 700mW Sur...
DataSheet: FDMA3028N datasheetFDMA3028N Datasheet/PDF
Quantity: 1000
1 +: $ 0.22000
10 +: $ 0.21340
100 +: $ 0.20900
1000 +: $ 0.20460
10000 +: $ 0.19800
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)
Description

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The FDMA3028N is a type of array of field-effect transistors (FETs). It supports an output array in which multiple FETs function in parallel. The FDMA3028N synchronizes their gate drive signal and gate signal, providing an optimum eight-output driver for high-frequency signal applications. This type of transistor array is designed for use in power applications, and is suitable for electronic boards, home appliances, and various commercial and industrial control systems.

An array of FETs can be thought of as a single FET combined with a number of additional components. Each component can act as an individual transistor, with its own gate drive and gate signal. The FDMA3028N is mainly used in power applications because it allows the system designer to combine multiple FETs in parallel to increase the current handling capacity.

The operation of the FDMA3028N is based on an array of FETs linked in parallel. The gate drive signal is sent to all FETs, and they turn on in parallel when the signal is applied. The gate signal is then sent to each FET individually, thus allowing a wide range of output power levels. A simple on/off logic control circuit can be used to set the desired output voltage or current.

The FDMA3028N has a number of features that make it suitable for a variety of power applications. Firstly, it is designed for use in high-frequency applications. The array of FETs is designed to provide a low-noise operation and high frequency response. Secondly, it has a low on-resistance and an improved gate charge-to-source resistance ratio. This means that it can support greater current flow with minimal power loss.

In addition, the FDMA3028N also has an integrated overtemperature protection circuit that prevents the device from going into thermal runaway. When the array of FETs goes into a state of thermal runaway, the integrated protection circuit shuts down the device and sends an alert to the system controller. The device is then restarted after the fault is cleared.

The FDMA3028N also provides a range of other features, such as a transient suppression circuit, which filters out sudden spikes in current that can occur during circuit operation, and a built-in negative temperature coefficient (NTC) thermistor, which increases the stability of the device over temperature.

In conclusion, the FDMA3028N is an ideal solution for high-power applications. Its array of FETs provides a low-noise and high-frequency response, and its overtemperature protection and transient suppression features help to ensure reliable operation. Additionally, its integrated NTC thermistor helps to maintain device stability over temperature ranges that may be encountered in certain power applications.

The specific data is subject to PDF, and the above content is for reference

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