FDS6064N7 Discrete Semiconductor Products

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FDS6064N7 Application Field and Working Principle

The FDS6064N7 is a general-purpose, 60V, N-Channel MOSFET. This MOSFET has been built with an advanced field-effect, self-aligned gate construction. The FDS6064N7 is trenched power MOSFET which is designed to offer low gate charge and high frequency performance in various low voltage and high-speed power lopping, power switching, and power supply applications.

Features

• Low on-resistance
• Low input capacitance
• Low gate charge
• Very low drain-source On-State resistance
• High switching performance
• High frequency operation
• Unique breakthrough UltraFET technology

Applications

• Power conversion applications requiring high performance IGBTs and MOSFETs
• High frequency converters
• Battery packs
• DC/DC converters
• DC/AC inverters
• Switched-mode power supplies
• Short-circuit protection
• Supply-regulator applications
• Motor speed control circuits

Working Principle

The FDS6064N7 combines a robust, advanced field-effect self-aligned gate construction with low drain-source On-State resistance (RDS(on)) and excellent gate charge (Qg) characteristics. This device utilizes the latest design technology from ON Semiconductor and has been developed for higher performance requirements in low voltage and high-speed applications. By utilizing ON Semiconductor\'s ultraFET technology, the FDS6064N7 can operate at frequencies of up to 5GHz with very low gate charge (Qg) and low input capacitance (Ciss).

When a voltage is applied to the gate terminal, it creates an electric field (E-field) across the body-to-source channel. This E-field causes electrons to move through the channel and induces a current flow through the drain and source terminals. The electrons flowing through the channel between the gate and source terminals can be modulated by changing the voltage applied to the gate terminal. Inducing the current flow through the drain terminal is essential for switching the device on and off.

The device operates in four regions, cut-off, active, linear and saturation. When the voltage to the gate terminal is < 0.3V, the device is operating in the cut-off region and no current flows from the drain to source. When the voltage is between 0.3 and VGS(th), the device is in the active region and a small current is starting to flow from the drain-source. When VGS > VGS(th), the device is fully transitioned on and current will start to flow freely through the device. The FDS6064N7 is designed to operate in the linear and saturation regions without significant degradation in performance.

Conclusion

The FDS6064N7 is a 60V, N-Channel MOSFET that has been built with an advanced field-effect, self-aligned gate construction. It features low on-resistance, low input capacitance, low gate charge, very low drain-source On-State resistance, high switching performance, and high frequency operation. Typical applications of FDS6064N7 are power conversion applications, high frequency converters, battery packs, DC/DC converters, DC/AC inverters, switched-mode power supplies, short-circuit protection, supply-regulator applications, and motor speed control circuits. Utilizing ON Semiconductor\'s ultraFET technology, it can operate at frequency up to 5GHz with very low gate charge and low input capacitance.

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