Allicdata Part #: | FDS6892AZ-ND |
Manufacturer Part#: |
FDS6892AZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 7.5A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Sur... |
DataSheet: | FDS6892AZ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 7.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1286pF @ 10V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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FDS6892AZ is a type of MOSFET Array, a type of field-effect transistor. They are used in amplification and switching circuits, as well as in a variety of other electrical applications.The FDS6892AZ is widely used due to its low on-resistance, low total gate charge, and low threshold voltage.
MOSFETs are made up of four terminals. The source, gate, and drain act as input, output and interface terminals, respectively. The fourth terminal, called the substrate, provides the gate voltage.In a MOSFET Array, each individual MOSFET is arranged in a specific way to provide higher current and enhanced switching capabilities. The FDS6892AZ is a array of dual n-channel MOSFETs that can be used in either common source or common drain operations.The FDS6892AZ array has two major advantages over individual MOSFETs. First, due to its low on-resistance, it has the ability to provide higher current throughput, making it ideal for applications such as power amplifiers. Second, the array provides a level of protective redundancy for the individual MOSFETs, meaning that if one fails, the others can still function.
The main working principle of the FDS6892AZ is embedded within the individual MOSFETs that make it up. Each MOSFET\'s operation is based on the voltage applied between the source and the gate. To turn on, a positive voltage is applied to the gate with respect to the source. When the gate voltage reaches a certain threshold, the source and drain channels open up, allowing current to flow. Conversely, to turn off, the voltage is removed and the source and drain channels close, stopping the current.
The FDS6892AZ offers many benefits for modern electronics applications. In addition to its low on-resistance, it also has a low total gate charge and low threshold voltage. This makes the device highly efficient, as the low gate charge reduces power consumption and the low threshold voltage allows the device to be triggered at lower current levels.In addition, the MOSFET Array is also well-suited to more sensitive applications, as the protective redundancy provides a level of protection against single-point failures. This makes the device ideal for use in signal switch and filtering applications, as well as in current-limiting applications.
Overall, the FDS6892AZ MOSFET Array is a highly efficient and reliable device that has a range of applications in modern electronics. Its low gate charge, low total on-resistance, and low threshold voltage make it highly efficient, while its protective redundancy makes it well-suited for sensitive applications. It is an ideal solution for power amplifiers, signal switch and filtering applications, and current-limiting applications.
The specific data is subject to PDF, and the above content is for reference
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