FDS6612A

The FDS6612A is a low-voltage, enhancement-mode, vertical DMOS (V-DMOS) power FET. It is designed for applications requiring high current switching such as energizing coils, relays, servo control and actuator devices, and other power applications. The FDS6612A is a recognized component for use in audio, data and telecommunication products.

The FDS6612A has a single source / drain lead layout and is available in a standard TO-220 package (isolated). It has a maximum current rating of 800mA and a maximum drain source voltage (VDS) of 20V. It operates over a temperature range of -55 to 175°C. The FDS6612A is available in an ON Semiconductor branded package.

The FDS6612A operates with a low voltage supply voltage up to 10V, making it suitable for a variety of applications. It has a very low off-state leakage current, making it ideal for battery-operated applications. It also features a low on-resistance, enabling efficient power conversion and conserving power. The FDS6612A also features fast switching speeds, minimum EMI and low power dissipation.

The FDS6612A is a single N-Channel enhancement-mode vertical DMOS FET. It works on the principle of the Schottky barrier that is formed between the diffusion region and the Si region of a semiconductor. At the interface of the two regions, electrons and holes are injected, giving rise to a conductivity modulation and resulting in an enhancement of the current flow. This is the transfer of charge carriers from the gate to the source, allowing current flow from drain to source. The voltage controlled gate cause the source-drain current to rise as the gate voltage rises. As the gate voltage attains a threshold point, the source–drain current will increase significantly.

The FDS6612A is ideal for applications requiring low voltage and current switching. It is best suited for energizing coils and other power applications. It has a low on-resistance and fast switching speeds, thereby providing efficient power conversion and minimum EMI. Its low voltage supply requirement and low off-state leakage current make it suitable for battery-powered applications. Developed as a recognized component for audio, data, and telecommunication products, the FDS6612A is designed to offer advanced -level performance and reliability.