FDS6299S Allicdata Electronics
Allicdata Part #:

FDS6299S-ND

Manufacturer Part#:

FDS6299S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 21A 8SOIC
More Detail: N-Channel 30V 21A (Ta) 3W (Ta) Surface Mount 8-SO
DataSheet: FDS6299S datasheetFDS6299S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3880pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDS6299S is a kind of single field effect transistor (FET) of the metal oxide semiconductor field effect transistor (MOSFET) family. In this article, the application fields, advantages and working principle of the FDS6299S will be discussed in detail.

First of all, the application fields of the FDS6299S are incredibly wide. This MOSFET can be used in a variety of applications, such as DC/DC converters, switches, low-side drivers, high-side switches, LED lighting, analog and digital power supplies, amplifiers, switches, power sequencing and many other applications. As it is a single FET, it can easily be used with application-specific integrated circuits (ASICs). Furthermore, its wide range of features, such as its low drive voltage, low conduction on-state resistance, fast switching time, and excellent RDS(on) behavior, makes it one of the most popular FETS available on the market.

In terms of advantages, the FDS6299S has several. It has 5kVrH minimum dielectric strength, which is sufficient for various DC/DC converters, making it resistant to voltage spikes, short circuits and current surges. Additionally, the FDS6299S operates at a wide temperature range of -40°C to 125°C, making it suitable for applications that require high operational temperature. This is especially useful for automotive applications, as the FDS6299S is commonly used in vehicle control. It also has low minimum RDS(on) of 3.00mΩ, which minimizes power loss and ensures high efficiency.

Now that we know the applications of the FDS6299S and its advantages, let us take a closer look at the working principle behind it. As previously mentioned, the FDS6299S is a single high-side MOSFET. It works in the following way. When the voltage of the gate is below the threshold voltage, the transistor is said to be in a state called cut off and it blocks any current flow between the source and drain. When the voltage on the gate is higher than the threshold voltage, the transistor is said to be in an “ON” state and it allows current to flow between the source and drain.

Furthermore, the FDS6299S has a unique drain-source structure, meaning the voltage applied to the gate controls the current flow between the source and the drain. This is fundamentally different than when controlling current flow through a BJT, where the voltage applied to the base controls the current flow between the collector and the emitter. For additional control, the FDS6299S also has an enable/disable pin. This pin is used to control whether or not the device is enabled, allowing for additional control and enabling features such as power sequencing and remote shutdown.

In conclusion, the FDS6299S is a high-side MOSFET that is used in a variety of applications due to its versatile features, such as its wide temperature range and its low minimum RDS(on). Through understanding its working principle and its advantages, it can be implemented into many circuits and devices, making it a popular choice among engineers and device designers.

The specific data is subject to PDF, and the above content is for reference

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