
Allicdata Part #: | FDS6630ATR-ND |
Manufacturer Part#: |
FDS6630A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 6.5A 8SOIC |
More Detail: | N-Channel 30V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | ![]() |
Quantity: | 7500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 38 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS6630A is the latest release from Fairchild Semiconductor in their family of SuperFET devices. It has a wide range of applications and is used in various kinds of products, with proper functions and safety. This article provides information about the application field and working principle of FDS6630A.
Application Field
The FDS6630A is primarily designed to meet the needs of digital power systems, such as DC-DC converters and AC-DC static converters. It has the capacity to deliver up to 60 watts of power and is well-suited for PWM and continuous current modes. The device can also be used in other applications, such as automotive controllers and motor control applications, because of its high current capacity and low gate-to-source capacitance. It is also suitable for switched mode power supplies, solar PV applications and plug-in charging systems. The device operates over an extended temperature range (-40°C to +125°C), making it suitable for a wide range of applications. In addition, its low profile (1.6mm) design makes it suitable for applications where space is a consideration. The features of this device combined make it an ideal choice for high power density systems.
Working Principle
The FDS6630A is a high-performance N-channel MOSFET. It combines a low RDS(ON) with low gate charge to minimize conduction and switching losses. As a result, FDS6630A can offer improved efficiency compared to its predecessors. The FDS6630A has a low body diode forward voltage (BVDSS), which results in a lower forward voltage drop and improved efficiency. It also has a low output capacitance, which results in faster turn-on time and improved switching noise immunity. The FDS6630A also features a wide operating temperature range, making it suitable for applications in challenging conditions. Additionally, it has a high tolerance to drain-to-source voltage (VDS), making it well-suited for applications with varying voltage levels.
The FDS6630A is designed to provide a reliable interface between the gate and source of the device, enabling fast switching and high-speed operations. The device also features a self-biasing Schottky diode, which prevents the occurrence of shoot-through currents. The device also utilizes a high-voltage drive output buffer to help ensure that the FDS6630A can withstand higher drain-to-source voltage variations without any additional gate protection. As a result, the device is capable of withstanding higher voltage levels and operating efficiently.
The FDS6630A has a wide range of applications across various industries and can provide improved system performance in high power density applications. Its features make it an ideal choice for a wide range of digital power systems, motor control applications and automotive controllers. Its low on-resistance, low turn-on and turn-off times, and wide temperature range make it a great choice for various power management applications.
The specific data is subject to PDF, and the above content is for reference
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