FDS6975

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	6A
Rds On (Max) @ Id, Vgs:	32 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	1540pF @ 15V
Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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FDS6975 Arrays

FDS6975 are an array of Field Effect Transistors (FETs) and Metal Oxide Semiconductor (MOSFETs), which are used in integrated circuits and other electronic components to amplify or switch electrical signals. The array is manufactured using a 3D dual-gate transistor technology, which is designed to reduce power consumption while providing higher performance. FDS6975 arrays are typically used in low-power applications such as audio amplifiers and switching regulators.

Working Principle

The working principle behind FDS6975 arrays is based on the electrical properties of a MOSFET. The FET is composed of three layers: the source, gate, and drain. An electric field is created at the gate when the applied voltage is higher than the threshold voltage, allowing an electric current to flow between the source and drain of the FET. The FET can then be used to amplify an electrical signal at a given frequency range.When multiple FETs are placed in an array, the effect of each FET is combined to significantly increase the overall gain and switching speed of the circuit. This is what makes FDS6975 arrays so attractive for low power applications such as audio amplifiers and switching regulators.

Advantages

One of the primary advantages of FDS6975 arrays is their high performance and low power consumption. By using the 3D dual-gate transistor technology, the array is able to reduce power consumption significantly while maintaining high performance. Additionally, since FDS6975 arrays are composed of multiple FETs, they are able to handle high amounts of power with much fewer components than other transistor technologies. FDS6975 arrays also offer an improved signal quality over other types of transistors. This is due to the improved coupling between FETs, which results in reduced output noise and higher signal fidelity. Additionally, the array is designed to reduce buildup on the gate, which further improves signal quality by minimizing capacitive effects.

Applications

FDS6975 arrays are typically used in low-power circuits such as audio amplifiers and switching regulators. Audio amplifiers benefit from improved signal clarity, reduced noise, and high switching speed. Likewise, switching regulators also benefit from the improved performance of the array, as they can switch faster and with less power consumption than other transistor technologies.Other applications of FDS6975 array include radio frequency amplifiers, voltage regulators, rectifiers, and power supplies. These applications benefit from the improved switching speed and power efficiency that the array provides.

Conclusion

FDS6975 arrays offer a high performance and low power alternative to other transistor technologies. By combining multiple FETs into an array, it is able to provide improved switching speed and power efficiency, which makes it ideal for applications such as audio amplifiers and switching regulators. It also offers improved signal clarity and reduced output noise, which makes it useful for other varieties of circuits. As a result, FDS6975 arrays are becoming increasingly popular for a wide range of applications.

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