FDS6162N7 Discrete Semiconductor Products

FDS6162N7 application field and working principle

The FDS6162N7 is an N-channel enhancement mode power MOSFET device known as a field-effect transistor (FET). This voltage-controlled field-effect transistor is highly reliable and ideal for use in a variety of applications, ranging from low-voltage power converters to industrial motor control systems.

FDS6162N7 field-effect transistors are used in a variety of applications, including AC, DC, rectifier, switching and linear power. The FDS6162N7 devices are available in both through-hole and surface-mount packages. The FDS6162N7 device provides advanced performance characteristics and superior reliability for a variety of applications.

Working principle

A field-effect transistor consists of three terminals: a source, a gate and a drain. It works on the principle of an electric field being used to control the flow of current. The gate terminal of the FDS6162N7 is given a positive voltage. This positive voltage repels the electrons in the channel, effectively turning off the transistor. When the gate voltage is allowed to return to its equilibrium level, the transistor is open again, allowing current to flow The FDS6162N7 is an enhancement type device, so a positive voltage is required on the gate to turn it on. No gate voltage is required to turn it off. This makes it ideal for use in high-power applications where fast switching is required.

Evaluation of electrical parameters

FDS6162N7 has some of the most desirable electrical parameters. It has a low gate-source threshold voltage which makes it suitable for use in most applications that require high performance switching. The FDS6162N7 device also features a very low on-resistance, which means it can handle high currents without significant power dissipation. Finally, it has a very high breakdown voltage, making it suitable for use in applications that require a wide range of voltage levels.

Conclusion

The FDS6162N7 is an N-channel enhancement mode field-effect transistor that is suitable for use in many applications. Its low gate-source threshold voltage, low on-resistance, and high breakdown voltage make it a great device for use in high performance switching and linear power applications. The FDS6162N7 device is available in both through-hole and surface-mount packaging.