FDS6986AS Allicdata Electronics
Allicdata Part #:

FDS6986ASTR-ND

Manufacturer Part#:

FDS6986AS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 6.5A, 7.9A 900...
DataSheet: FDS6986AS datasheetFDS6986AS Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®, SyncFET™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 7.9A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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FDS6986AS is a type of p-channel MOSFET that is known as an array. These arrays are designed for use in very different applications and working principles. Before using this type of MOSFET array it is important to understand these applications and principles.

Application fields and Working Principle

The FDS6986AS is an array type of p-channel MOSFET that is suitable for several applications. This includes pulse- and analog signal handling, as well as digital logic circuits and high frequency signal handling. It can also be used as a low-noise amplifier, and some applications may be used as a wide-band amplifier, linear voltage regulator, or power supply.

The FDS6986AS is a three-terminal device that works in the same manner as a common MOSFET. Gate, Drain, and Source voltage can be applied to the FDS6986AS. When a voltage is applied, it allows current to flow from drain to source. It is important to note that, unlike a normal MOSFET, it has three terminals – the gate, drain, and source, which are placed in in a specific configuration. This configuration is determined by a matrix of transistors, enabling the FDS6986AS to operate faster than a normal MOSFET.

The FDS6986AS is capable of handling voltage of up to 300V(Max)and current of up to 10A(Max). This MOSFET array offers greater reliability, high efficiency and temperature stability. It has a maximum gate resistance of 0.1 ohm and an excellent thermal resolution. It has an high input capacitance of 100pF, which results in low switching losses and eliminates the need for additional drivers or level shifters.

The FDS6986AS has an ESD capacity of 8kV, and is designed to perform well in a wide range of temperatures ranging from -55°C to 175°C. It is also suitable for automotive applications, and operates over a wide frequency range from 1 MHz to 5 GHz. This MOSFET array allows for low output impedance, and is suitable for applications such as switching regulators and DC-DC converters.

Conclusion

The FDS6986AS is a p-channel MOSFET array that is suitable for several applications. It has a wide-operational voltage range, high temperature stability, and low switching losses. It is also suitable for automotive applications, applications which require high frequencies, and applications which require low output impedance. The FDS6986AS is an ideal solution for many applications, and is an excellent choice for engineers who are looking for a reliable and robust MOSFET array.

The specific data is subject to PDF, and the above content is for reference

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