Allicdata Part #: | FDS6986AS_SN00192-ND |
Manufacturer Part#: |
FDS6986AS_SN00192 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2 N-CH 30V 6.5A/7.9A 8SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.5A, 7.9A 900... |
DataSheet: | FDS6986AS_SN00192 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench®, SyncFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A, 7.9A |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 6.5A, 10V, 20 mOhm @ 7.9A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA, 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 5V, 8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 10V, 550pF @ 10V |
Power - Max: | 900mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The FDS6986AS_SN 00192 is an array of four n-channel power MOSFETs used for power distribution applications. The MOSFETs have a dual gate design with an enhanced body diode protection element. This type of device is typically used in applications where a large voltage is being applied to a low resistance load, such as a motor. It is also used in applications such as switch mode power supplies, inverters, amplifiers, and switching circuitry.
The FDS6986AS_SN 00192 is designed for high current and high frequency switching applications. It is constructed of N-channel MOSFETs in a dual gate configuration with a built-in body diode protection element. This protects the MOSFETs during inrush current conditions. The devices are manufactured in an SOIC-8 package, which is a surface mountable device.
The working principle of the FDS6986AS_SN 00192 is based on the use of two N-channel MOSFETs connected in parallel, with each MOSFET having its own gate. These MOSFETs are arranged in an \'H-bridge\' configuration and the gates of the MOSFETs are controlled by an external signal. When the signal is high, the MOSFETs are activated, allowing current to flow through the load. Conversely, when the signal is low, the MOSFETs are turned off and the load current is blocked.
The FDS6986AS_SN 00192 is designed for use in applications where high voltage and high current are required, such as motor control, switch mode power supplies, inverters and switching circuits. The device is rated for up to 40V and 6A, which is sufficient for most applications.
In summary, the FDS6986AS_SN 00192 is an array of four N-channel MOSFETs used in power distribution applications. The device is designed for high current and high frequency switching applications, and is rated for up to 40V and 6A. It has a dual gate design with an added body diode protection element, and is typically used in applications such as motor control, switch mode power supplies, amplifiers and switching circuits.
The specific data is subject to PDF, and the above content is for reference
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