
Allicdata Part #: | FDS6575TR-ND |
Manufacturer Part#: |
FDS6575 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 10A 8-SO |
More Detail: | P-Channel 20V 10A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 15000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4951pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 10A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDS6575 is a type of Field-Effect Transistor (FET) and is a single Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). FETs are transistors that are based on a single semiconductor device and use a gate as the control element. Unlike other types of transistors, such as BJTs, FETs don\'t require a bias voltage. Instead, they are electrostatic devices that make use of the difference in potential between the gate and the channel.
FETs have become increasingly popular in the electronics industry because of their low power consumption, exceptionally high switching rates, and small size. The FDS6575 is a high-power, high-voltage, low-capacitance MOSFET that is used in a wide range of applications. These applications include power supplies, motor control, audio power amplifiers, power switching converters, high-frequency switching, voltage-level shifting, and other power-control circuits.
The FDS6575 has a high input impedance, low output impedance, and high frequency response, making it ideal for power-switching applications. Its low capacitance and its low gate-drain charge enable faster switching and higher efficiency. The FDS6575 is also designed with a very low gate resistance, which allows for high-current operation and for low voltage-drop along the entire channel.
The working principle of the FDS6575 is based on the use of a gate as an electric field which controls the current flow through the transistor. When the voltage of the gate is high, current flows freely through the device, resulting in a saturation state. When the voltage of the gate is low, the current flow is blocked, resulting in an off state. This is called a depletion mode transistor.
The high-voltage capabilities of the FDS6575 make it ideal for applications that require high voltage levels, such as powering appliances and other high-power electronic equipment. The device is capable of operating at voltages of up to 40V, making it suitable for regulating currents in both AC and DC-powered systems. The FDS6575 is also capable of handling peak power levels up to 100W, which means it can be used in applications that require significant power output.
The FDS6575 is a highly reliable and efficient transistor device. It features a low-on-resistance and a high-off-resistance, which ensures a reliable turn-on and turn-off. It also features a low gate-drain charge, which reduces electrical noise and increases the transistor\'s efficient operation. Additionally, the FDS6575 has a high pinch-off voltage, which ensures that it can control even high-voltage systems.
The specific data is subject to PDF, and the above content is for reference
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