FDS6570A Discrete Semiconductor Products |
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Allicdata Part #: | FDS6570ATR-ND |
Manufacturer Part#: |
FDS6570A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 15A 8SOIC |
More Detail: | N-Channel 20V 15A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | FDS6570A Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 15A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDS6570A is a type of field effect transistor (FET), more specifically a metallic-oxide-semiconductor field-effect transistor (MOSFET). It is a solid-state integrated circuit device, meaning it is made from silicons and other materials, and runs on electricity.
The FDS6570A operates as a three-terminal device that can either act as a current source or a switch, depending on its application. The three terminals are the gate, the source, and the drain, each of which must have a voltage potential in order for the device to operate. The gate is used to control the flow of current, either by applying a voltage across it or reversing its polarity. The source is the original voltage source, while the drain is the destination of the current.
In terms of its application fields, the FDS6570A can be used in a variety of areas, ranging from power amplifiers and audio equipment to signal processing and data acquisition. The device is highly flexible, allowing it to be used in different applications with varying degrees of power and efficiency. In particular, it is commonly used in power amplifiers and audio equipment to provide greater control over the signal so as to achieve a better sounding output.
The working principle of the FDS6570A is based on the concept of a field effect transistor, which is a type of transistor that operates by creating an electric field between gate and source terminals. This electric field can then be used to control the “on” and “off” behavior of the transistor, thereby controlling the current flow. The FDS6570A also makes use of a “channel” between the source and the drain, which influences the conductivity of the device. When a voltage is applied to the gate terminal and the channel is opened, current can flow from the source terminal to the drain terminal.
In terms of power consumption, the FDS6570A uses a much lower amount of power than other types of transistors, such as bipolar junction transistors. Additionally, its design allows it to be reliably used with much smaller power levels than other transistors, which is great for applications that require higher efficiency and lower power consumption. This makes the FDS6570A an ideal choice for applications such as power amplifiers, audio equipment, and signal processing.
The FDS6570A is a versatile and reliable device capable of providing excellent performance in a variety of applications. Its low power consumption and high efficiency make it an especially attractive choice when it comes to power amplifiers, audio equipment, and signal processing applications. The device’s three-terminal setup allows it to be used as either a switch or current source, making it a highly adaptable device that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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