FDS6690AS

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The FDS6690AS is an advanced high-speed silicon epitaxial double-diffused n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is widely used in high-speed switching applications. It is an enhancement-mode field-effect transistor, with a maximum drain-source voltage of 800 V and a maximum drain current of 17 A. The FDS6690AS is widely used for a variety of radiofrequency (RF) and power applications, such as amplifier coupling, DC-DC converters, drive circuits, switch mode power supplies and more.

The FDS6690AS is a power MOSFET, specifically a n-channel enhancement-mode type, meaning the FET turns on when the gate-source voltage is below its threshold voltage. When this device is "on", the resistance between the drain (D) and the source (S) terminals is determined by the Gate-Source voltage and the drain current. This makes the device suitable for high-frequency switching, current amplification and digital switching applications.

The FDS6690AS also features a low RDS(ON) (On-Resistance), enabling it to operate at high frequencies and high power levels. The RDS(ON) is the source-drain resistance when the device is in its on-state. The low RDS(ON) reduces switching losses, power dissipation and heat generation, resulting in greater efficiency for high-speed applications.

The FDS6690AS utilizes an innovative process in which the transistor is formed by two diffusion layers and two contacts. The first diffusion layer contains the source and the gate, while the second layer contains the drain. This process allows for a much thinner, very low-resistance channel between the source and drain, resulting in an extremely low RDS(ON) and allowing the device to switch at higher frequencies with lower power loss.

The FDS6690AS is also capable of handling high drain-source voltages, which makes it suitable for high-voltage applications, such as DC-DC converters. The FDS6690AS is capable of operating at a maximum drain-source voltage of 800V and a drain current of 17A, allowing it to handle high-power applications with ease. Additionally, the device is extremely fast, with a typical switching speed of 10nS, making it ideal for high-frequency applications.

The FDS6690AS is one of the most commonly used high-speed MOSFETs on the market today. It is widely used in a variety of radiofrequency and power applications, such as amplifier coupling, DC-DC converters, drive circuits, switch mode power supplies and more. Its low RDS(ON), high drain-source voltages, and high switching speed make it an excellent choice for high-frequency, high-power applications.

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