FDS8960C

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The FDS8960C is a power MOSFET array, comprised of six N-channel MOSFETs. This product features dual source capabilities, with each transistor having its own gate, drain and source connection. The FDS8960C is a multi-cell package, meaning that packages can house more than one transistor in them. This allows for higher current, lower on-resistance and improved switching speed. It also provides a cost-effective alternative to other solutions.

This MOSFET array from Fairchild Semiconductor is an example of an advanced product that is versatile enough to be used in a variety of applications that require high power and fast switching times. Some of the applications the FDS8960C is designed for include motor control, digital power supplies, and Lighting control. This array is capable of handling very high current loads due to the combination of all six devices\' low on-resistance, which offers greater circuit efficiency and reduced power losses.

When designing a power system, the decrease in on-resistance is an important factor. The FDS8960C provides a very low on-resistance, as low as 94 mΩ. This helps reduce the losses that occur in switch mode power supplies, current amplifiers and motor control systems. In addition, due to the array’s low thermal resistance, it can handle large amounts of current in a small space.

The FDS8960C features a die size of 2x1 millimeters. This allows the array to be compact in size and be used in many applications. It also has a total gate charge of 425 nanocoulomb and a total drain-source on-resistance of only 0.094 Ω. Its gate-source voltage is also rated at +/- 20 volts and its drain-source voltage at 100V.

This MOSFET array is also capable of operating at very high temperatures. Its operating temperature range is -55°C to +175°C and its junction temperature range is -55°C to +150°C. This makes it an ideal solution for many harsh environment applications, such as those found in automotive and industrial power electronics.

The working principle of the FDS8960C is the same as for any other MOSFET device. Its gate terminal is used to control the flow of current between the drain and source by exploiting the fact that the voltage between the gate and source terminals of the MOSFET determines the resistance between the drain and source terminals. The gate terminal of the MOSFET is connected to a control circuit, which is used to switch the FET on or off as required. Depending on the gate voltage, the resistance between the drain and source terminals of the MOSFET will either increase or decrease. This can be used to switch a circuit on or off as required.

The FDS8960C is a great tool for a variety of applications, including motor control, lighting, digital power supplies and more. Due to its low thermal resistance, it can handle highly efficient current loads with minimal losses. Its very low on-resistance allows for better circuit efficiency and higher power levels. Finally, its ability to operate in very high temperatures makes it an ideal solution for many industrial and automotive applications.

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