HUFA76404DK8T

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	62V
Current - Continuous Drain (Id) @ 25°C:	3.6A
Rds On (Max) @ Id, Vgs:	110 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	250pF @ 25V
Power - Max:	2.5W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

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The HUFA76404DK8T is an array of N-Channel depletion-mode field-effect transistors (FETs) built using Toshiba’s most advanced silicon-on-insulator (SOI) technology. Designed for applications requiring high-speed switching, its discrete transistors provide an array of eight individually controlled FETs. Each FET is composed of two gate terminals (G1 and G2), two source terminals (S1 and S2), and one drain terminal (D1).Although generally used as a switching device, FETs are also used in a variety of other devices and circuits, including amplifiers and voltage-to-current converters. The HUFA76404DK8T can be used to operate these circuits as well. When used as a switch, the device functions as a binary-switching element, allowing currents to pass when a voltage is applied to the gate. When using the HUFA76404DK8T as an amplifier, the device functions as a voltage-controlled current source, making it capable of providing controlled voltages and currents through the gate terminals.The HUFA76404DK8T is composed of a series of FETs in a single die and is designated as an array. Because of its design, one device is capable of providing the same functionality as several discrete FETs, while only occupying a small amount of space. This makes it ideal for use in a wide variety of applications, including automotive, consumer electronics, and medical electronics.The mode of operation for the HUFA76404DK8T is straightforward. When a voltage difference exists between the gate and either the source or drain, an electric field is set up and a channel is created through the substrate. The channel is an area of reduced resistance, allowing current to flow from the source to the drain. When the voltage difference is reduced, the electric field is reduced and the channel is destroyed, thus shutting off current flow.The performance of the HUFA76404DK8T is largely dependent on the characteristics of the substrate material. The thinner the substrate, the higher the switching speed of the device, and the lower its power consumption. In order to achieve maximum performance, it is important to use a substrate material that has a low resistivity and is capable of operating at high temperatures.The HUFA76404DK8T is a versatile device capable of providing high switching speed, low on-resistance, and low power consumption. It is capable of providing all of these features in a small form factor, making it ideal for use in a wide variety of applications. Its discrete transistors provide the ability to easily and inexpensively control current flow, making it an attractive choice for any designer requiring a high-speed switching device.

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