HUFA75433S3ST

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1550pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	117nC @ 20V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	16 mOhm @ 64A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	64A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The HUFA75433S3ST is an advanced Power MOSFET that can be used in a variety of applications. It is the latest from Renesas\' silicon-gate power MOSFET technology and utilizes a self-aligned gate structure. This MOSFET operates at very low gate threshold voltages (VGSths) to minimize the gate drive power consumption. Its ultra-low input capacitance, fast switching speed, and high peak and average drain current make it ideal for a variety of power conversion applications. The HUFA75433S3ST is widely used in power management applications such as DC-DC converters, relay drivers, motor controls, and switching power supplies. The fast switching speed, low conduction losses, and high breakdown ratings make it well-suited for these applications. The low input capacitance and energy-efficient drain control circuitry help to save energy in high-frequency DC/DC converters and switching power supplies. The MOSFET is manufactured using a special manufacturing process known as self-aligned gate structure. This process results in a highly accurate gate threshold voltage which translates to low voltage operation and better overall performance of the device. The gate region from which the gate oxide insulation is formed is self-aligned, eliminating the need for incurring the expense and complexity of lithography, and therefore reducing overall costs. The HUFA75433S3ST offers high drain current, fast switching speeds and low gate threshold voltages. It is capable of operating at up to 200V, drawing up to 17A drain current. It is ideal for use in a variety applications.The power MOSFET is driven by an integrated gate driver that provides an efficient control signal to the MOSFET. The gate driver typically consists of four components: a voltage source, a switch, a driver circuit, and a controller.The voltage source is generally a voltage regulator, battery, or a DC/DC converter that provides a fixed or variable voltage for the gate driver. The switch is used to drive the gate of the MOSFET and can be either a discrete transistor or an integrated driver IC. The driver circuit is responsible for providing the voltage signal to the gate of the MOSFET to turn it on and off.Finally, the controller is responsible for triggering the driver circuit based on the external signal. The controller can be an analog, digital, or a combination of both. It is also capable of providing protection in case of an overvoltage or overcurrent situation. In conclusion, the HUFA75433S3ST is an advanced Power MOSFET that can be used in a variety of applications. It utilizes a self-aligned gate structure to reduce costs, while offering high drain current, fast switching speeds and low gate threshold voltages. It is driven by an integrated gate driver that provides an efficient control signal to the MOSFET. The low input capacitance and energy-efficient drain control circuitry help to save energy in high-frequency DC/DC converters and switching power supplies, making it well-suited for power management applications such as DC-DC converters, relay drivers, motor controls, and switching power supplies.

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