Allicdata Part #: | HUFA76437P3-ND |
Manufacturer Part#: |
HUFA76437P3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 71A TO-220AB |
More Detail: | N-Channel 60V 71A (Tc) 155W (Tc) Through Hole TO-2... |
DataSheet: | HUFA76437P3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 71A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 71A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 2230pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 155W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are the building blocks of modern electronics and are used in a wide variety of applications from radio frequency amplifiers to computer memory. The HUFA76437P3 is a single transistor device, specifically a metal-oxide-semiconductor field-effect transistors (MOSFET). It is widely used in high power amplifier applications due to its low on-resistance, high switching speed, and high input capacitance.
MOSFETs are unipolar transistors, meaning they are capable of controlling electric current with the application of an electrical field. A field-effect transistor (FET) is operated by controlling the electric field of its gate, while the voltage of the drain-source is kept constant. The HUFA76437P3 has a static Drain-Source On-resistance of 2mΩ, allowing it to switch heavy loads from low voltages with minimal voltage drops. It also has a maximum drain current of 2A, allowing for higher power applications, and a high switching speed of 1.4 V/ns, making it suitable for higher speed applications.
The working principle of an FET can be understood when the basic structure of a MOSFET is considered. It consists of a section of n-type material that has an insulated gate electrode, or gate dielectric, laid over it. The insulated gate is highly conductive and is connected to the gate terminal. The presence of voltage potential at this terminal can create a strong electric field in the surrounding area, which influences the flow of current through the channel of the n-type material. By controlling the electric field, it is possible to control the flow of electrons and thus impart a digital logic to the MOSFET.
The HUFA76437P3 is typically seen in high power amplifiers and motor control applications due to its low on-resistance and high gate input capacitance, which reduce power loss of the circuit. It is also used in switching applications such as AC/DC converters and power controllers, because of its fast switching speed and low input capacitance. As a result, HUFA76437P3 is a versatile device that can be used across a wide range of applications.
In conclusion, HUFA76437P3 is a single MOSFET device suitable for high power applications. It has a low on-resistance, a high switching speed, and a high gate capacitance, making it suitable for motor control, power control, and amplifiers. The HUFA76437P3 is also simple to use, as its working principle is based on the control of an electric field, making it an ideal device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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