HUFA75545S3S Allicdata Electronics
Allicdata Part #:

HUFA75545S3S-ND

Manufacturer Part#:

HUFA75545S3S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 75A D2PAK
More Detail: N-Channel 80V 75A (Tc) 270W (Tc) Surface Mount D²P...
DataSheet: HUFA75545S3S datasheetHUFA75545S3S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 270W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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HUFA75545S3S is a type of field-effect transistors (FETs) designed to act as electronic switches or amplifiers in electronic circuitry. They are used in almost all areas of electronics, from small signal transistors to power applications. The HUFA75545S3S is a n-channel enhancement-mode Metal Oxide Semiconductor FET (MOSFET) with a maximum drain current rating at 25 Amps and a voltage rating of 100 Volts. This type of MOSFET offers high efficiency and low power consumption, making it ideal for use in a wide range of applications.

The most common use of the HUFA75545S3S is for power switching, as it offers a combination of high current and voltage ratings. The device is commonly used in power supplies and motor control applications, and to drive LEDs, relays, and similar power-hungry components. In addition, the device can be used as a switch or as an amplifier in many other applications, such as audio amplifiers and video amplifiers.

The working principle of the HUFA75545S3S is based on the fact that voltage applied to the Gate terminal can control the flow of current through the drain and source terminals. When a voltage is applied to the Gate of the device, the channel between the Drain and Source terminals becomes ‘on’, enabling current to flow from the source to the drain. The current flowing through the device can be controlled by adjusting the voltage applied to the Gate terminal.

The basic operation of the MOSFET can be explained using the analogy of an electronically controlled valve. When the Gate voltage is low, the channel acts like a closed valve blocking the flow of current, and when the Gate voltage is high, the channel acts like an open valve, allowing the current to flow. The HUFA75545S3S is designed to operate with a Gate voltage of 4 to 7 Volts, allowing a wide range of control of the current flow through the device.

The HUFA75545S3S is a versatile device which can be used in many electronic applications. It is used in power switching and motor control applications due to its high current and voltage ratings. It is also used as a switch or an amplifier in a wide range of electronics, from audio amplifiers and video amplifiers, to power supplies and other power-hungry components.

The HUFA75545S3S is an important component in modern electronics and is used in a variety of applications. It is a low-power, high-efficiency device which offers a wide range of current and voltage control. It is commonly used in power switching and motor control applications, and as a switch or amplifier for audio and video applications.

The specific data is subject to PDF, and the above content is for reference

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