Allicdata Part #: | HUFA76445S3S-ND |
Manufacturer Part#: |
HUFA76445S3S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 75A D2PAK |
More Detail: | N-Channel 60V 75A (Tc) 310W (Tc) Surface Mount D²P... |
DataSheet: | HUFA76445S3S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4965pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 310W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The HUFA76445S3S is a common transistor used in electronic design, and is categorized as a single field-effect transistor (FET) or MOSFET. These transistors are popular in a variety of applications due to their ease of use and simple design. This article will discuss the application field and working principle of the HUFA76445S3S.
Field-effect transistors, or FETs, are an important type of transistor that is used for a wide variety of purposes. They are preferred over conventional BJT designs due to their ability to operate at high frequencies and low power, as well as their robust design. Due to these attributes, FETs are popular in switching, high-frequency, and analog applications. Examples of devices that use FETs include computers, cell phones, power supplies, high-speed switching circuits, and motor control circuits.
The HUFA76445S3S is a single gate device, meaning it is composed of a single semiconductor channel. The gate is the control element of FETs. By applying a voltage to the gate, a current is allowed to flow between the source and drain. When the gate voltage reaches a certain threshold, a ‘pinch-off’ voltage is reached, which effectively cuts off the current flow. This makes the transistor a great choice for switching applications.
In addition to its use in switching, the HUFA76445S3S can also be used for amplification in signal-processing applications. Due to its relatively low power consumption and high frequency capabilities, it is a popular choice for such applications. It is also commonly used in active filters, linear amplifiers, and other applications that require signal processing.
In addition to its various uses, the HUFA76445S3S has specific limitations. As a single-gate FET, it cannot be paralleled with another device. This means that the power handling is limited to a maximum of 5 volts. As well, the on-voltage must be kept below a maximum of 1.7V. These limitations should be considered when selecting the proper device for a given application.
The basic working principle of the HUFA76445S3S is simple. A voltage is applied to the gate, which causes a channel to form between the source and drain. When the gate voltage is increased, this channel is pinched off, and the current flow is stopped.
The HUFA76445S3S is a versatile device that is used for a variety of applications. Due to its low power consumption and high frequency capabilities, it is a popular choice for switching, signal processing, and other electronic applications. Its limitations should be kept in mind when selecting the proper device for an application. Its simple working principle makes it a great device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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